Abstract: A backside illuminated CMOS image sensor and a method of fabricating the sensor are disclosed. The backside illuminated CMOS image sensor includes a first substrate and a second substrate. A plurality of pixel cells are formed in the front side of the first substrate, and a plurality of grooves are formed in the back side. Each of the grooves has at least one sidewall inclined with respect to the back surface of the first substrate. The second substrate is bonded to the first substrate on a side closer to the front side. A method for fabricating such a backside illuminated CMOS image sensor is also disclosed. The grooves formed in the back side of the first substrate can reduce reflection loss of light incident on the back surface and hence enhance quantum efficiency of the backside illuminated CMOS image sensor.

Abstract: The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S1, providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S2: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S3: performing a reversed-etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S4: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure.

Abstract: The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S1, providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S2: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S3: performing a reversed-etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S4: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure.

Abstract: The invention relates to the field of semiconductor manufacturing process, more particularly, to an image sensor having an embedded color filter and its preparation method, providing a bonded wafer with leads, and performing preparation process of metal insulated gates and embedding process of color filters on bonded wafers, etching to expose the opening of the lead, and eventually combining color filter process with lead process; the implementation of the invention is simple, implementation difficulty is relatively small, and can greatly improve the transmission speed of output image signal and image quality, at the same time, the technical scheme can be used in front-illuminated, back-illuminated and stackable image sensors, etc.