Abstract: The present disclosure relates to a non-alcoholic fatty liver artificial tissue model. As compared to a conventional technology by which tissues are cultured only in Matrigel including a device composed of a decellularized liver tissue-derived extracellular matrix and a plurality of microchannels or a decellularized liver tissue-derived extracellular matrix, the present disclosure enables better mimicking of an actual non-alcoholic fatty liver disease due to the presence of Kupffer cells and hepatic stellate cells. Also, according to the present disclosure, the growth of liver organoids can be improved and fat accumulation and inflammation in the liver organoids can be caused to occur well through free fatty acid treatment, and the phenotypes of non-alcoholic fatty liver can be better expressed.

Abstract: The present disclosure relates to a plurality of host materials, an organic electroluminescent compound, and an organic electroluminescent device comprising the same. By comprising a specific combination of host compounds and/or an organic electroluminescent compound according to the present disclosure as an organic electroluminescent material, an organic electroluminescent device having low driving voltage and/or high luminous efficiency and/or long lifespan characteristics can be provided.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, power efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A semiconductor manufacturing equipment may include a process chamber for treating a substrate; a front-end module including a first transfer robot, wherein the first transfer robot may be configured to transport the substrate received in a container; a transfer chamber between the front-end module and the process chamber, wherein the transfer chamber may be configured to load or unload the substrate into or out of the process chamber; and a cassette capable of receiving a replaceable component capable of being used in the process chamber. The front-end module may include a seat plate configured to move in a sliding manner so as to retract or extend into or from the front-end module. The cassette may be configured to be loaded into the front-end module while the cassette is seated on the seat plate.

Abstract: Disclosed is a composite for forming a coacervate interfacial film. The composite for forming the coacervate interfacial film contains a cationic hectorite nanoplate-shaped particle structure containing a hectorite nanoplate-shaped particle and a cationic surfactant coupled to a surface of the hectorite nanoplate-shaped particle, and an anionic cellulose nanofibril containing an anionic functional group in at least a portion thereof, in which the composite may form the coacervate interfacial film at an interface of an oil phase and a water phase through electrostatic interaction between the cationic surfactant and the anionic functional group.

Abstract: Disclosed herein is a method for user-centered visitor access management, which may include issuing, by a management office server, a digital certificate to a householder terminal; registering, by a wall-pad, a householder in response to a request to register the householder based on the digital certificate; requesting, by the householder terminal, the management office server to register a visitor based on a visit request from a visitor terminal and delegating the digital certificate to the visitor terminal; making an entry request to a management terminal based on the digital certificate; verifying, by the wall-pad, the digital certificate based on a request for verification for entry from a wall-pad management terminal and providing a verification result to the wall-pad management terminal when the management terminal is the wall-pad management terminal; and managing and controlling, by the wall-pad, permission to use home devices based on delegated permission information of the digital certificate.

Abstract: Disclosed herein are a method and apparatus for converting a credential data schema.

Abstract: Provided is an Al—Fe-alloy plated steel sheet for hot forming, having excellent TWB welding characteristics since excellent hardness uniformity of a TWB weld zone after hot forming is obtained by suitably controlling a batch annealing condition, after plating Al, such that an Al—Fe-alloy layer is formed; a hot forming member; and manufacturing methods therefor.

Abstract: The present disclosure provides a mobile communications system line number sheet management device and method. Provided, according to one aspect of the present disclosure, is a line number sheet management device and method, for automating access network-related line number sheet management by automatically collecting and updating line number information, the line number information being collected from a mobile communications base station management server (mobile communications system management server) and a fronthaul management server. Provided, according to another aspect of the present disclosure, is a fronthaul device for: acquiring unique information of a base station by receiving an optical signal from any one of a radio unit (RU) and a digital unit (DU); and transmitting the unique information of the base station to a fronthaul management server.

Abstract: The present invention relates to an image encoding/decoding method and apparatus. An image encoding method according to the present invention may comprise generating a transform block by performing at least one of transform and quantization; grouping at least one coefficient included in the transform block into at least one coefficient group (CG); scanning at least one coefficient included in the coefficient group; and encoding the at least one coefficient.

Abstract: The present invention relates to a method for decellularization of porcine stomach mucosal tissue for culturing stomach tissue or stomach cancer tissue, a composition for producing a scaffold, and a method for culturing tissue, and particularly, to: a method for decellularization of porcine stomach mucosal tissue comprising chopping porcine stomach mucosal tissue and performing first treatment, second treatment, washing, and third treatment; a decellularization product composed of porcine stomach mucosal tissue decellularized by the method; a composition for producing a stomach tissue or stomach cancer tissue culture scaffold containing a pepsin digest of the decellularization product; and a method for culturing stomach tissue or stomach cancer tissue comprising adding stomach cells or stomach cancer cells to the composition, followed by shaping to produce a tissue culture scaffold containing stomach cells or stomach cancer cells, and incubating the scaffold in a medium.

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.

Abstract: Disclosed herein are a neural network model deployment method and apparatus for providing a deep learning service. The neural network model deployment method may include providing a specification wizard to a user, searching for and training a neural network based on a user requirement specification that is input through the specification wizard, generating a neural network template code based on the user requirement specification and the trained neural network, converting the trained neural network into a deployment neural network that is usable in a target device based on the user requirement specification, and deploying the deployment neural network to the target device.

Abstract: This application relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. In one aspect, the method includes forming a support layer of a silicon nitride material on a silicon substrate, and forming a core layer of a graphene material on the support layer. The method may also include forming a graphene defect healing layer on the core layer by selectively forming a material of MeOxNy (Me is one of Si, Al, Ti, Zr, and Hf, x+y=2) at a grain boundary of the core layer in an atomic layer deposition process using heat in order to heal defects generated in graphene forming the core layer without additional damage to the graphene. The method may further include a capping layer on the graphene defect healing layer, wherein a central portion of the silicon substrate under the support layer is removed to form an opening partially exposing the support layer.

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCX (0.25<x<0.45).

Abstract: This application relates to a pellicle for extreme ultraviolet lithography used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer formed of an M-? material in which M is combined with ?. Here, M is one of Si, Zr, Mo, Ru, Y, W, Ti, Ir, or Nb, and a is at least two of B, N, C, O, or F.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.