Abstract: The present invention relates to a body-attached electromyogram sensor that detects signals from a muscle and provides the degree of contraction and relaxation of the muscle. More specifically, the present invention relates to a body-attached electromyogram sensor that is formed very thin so that the electromyogram sensor may be attached more naturally inside a socket physically connecting a robot leg of an amputee, and thus is more comfortable to wear. In addition, the body-attached electromyogram sensor is made of a material that is elastic and thus naturally expands and contracts according to the movement of the muscle, and is breathable and thus may effectively discharge secretions such as sweat. Accordingly, the body-attached electromyogram sensor may be worn repeatedly and attached for long periods of time.

Abstract: Provided are an X-ray detector having fabrication fault tolerant structure and a method for manufacturing the same using a micro-transfer printing (MTP) technique. The X-ray detector may include a photodiode layer formed on a base substrate within a pixel area and including a plurality of photodiode pixel units, a dummy layer formed the base substrate within a peripheral area, a plurality of pixel driving integrated chips printed on the photodiode layer, a plurality of primary column and row integrated chips printed on the dummy layer, and metal lines coupling the column and row integrated chips with pixel driving integrated chips and other constituent elements, wherein the plurality of pixel driving integrated chips and primary column and row integrated chips are manufactured separately from the photodiode layer and the dummy layer and attached on the photodiode layer and the dummy layer, respectively.

Abstract: Provided are an X-ray detector having fabrication fault tolerant structure and a method for manufacturing the same using a micro-transfer printing (MTP) technique. The X-ray detector may include a photodiode layer formed on a base substrate within a pixel area and including a plurality of photodiode pixel units, a dummy layer formed the base substrate within a peripheral area, a plurality of pixel driving integrated chips printed on the photodiode layer, a plurality of primary column and row integrated chips printed on the dummy layer, and metal lines coupling the column and row integrated chips with pixel driving integrated chips and other constituent elements, wherein the plurality of pixel driving integrated chips and primary column and row integrated chips are manufactured separately from the photodiode layer and the dummy layer and attached on the photodiode layer and the dummy layer, respectively.

Abstract: Provided are an X-ray detector including a plurality of pixel driving micro integrated chips separately fabricated from a photodiode layer and printed on the photodiode layer and a method for manufacturing the X-ray detector. The X-ray detector may include a photodiode layer and a driver layer. The photodiode layer may include a plurality of photodiodes and be configured to receive X-ray that have passed through a target object and convert the received X-ray to electric signals. The driver layer may be formed on the photodiode layer and include a plurality of micro driving integrated chips each coupled to two or more photodiodes in the photodiode layer. The plurality of pixel driving integrated chips may be manufactured separately from the photodiode layer and printed on the photodiode layer using a micro-transfer printing method.

Abstract: Provided are an X-ray detector including a plurality of pixel driving micro integrated chips separately fabricated from a photodiode layer and printed on the photodiode layer and a method for manufacturing the X-ray detector. The X-ray detector may include a photodiode layer and a driver layer. The photodiode layer may include a plurality of photodiodes and be configured to receive X-ray that have passed through a target object and convert the received X-ray to electric signals. The driver layer may be formed on the photodiode layer and include a plurality of micro driving integrated chips each coupled to two or more photodiodes in the photodiode layer. The plurality of pixel driving integrated chips may be manufactured separately from the photodiode layer and printed on the photodiode layer using a micro-transfer printing method.

Abstract: Embodiments of the present invention provide an approach for improving overall chip speed by providing one or more sampling circuits in an ROIC so that signal processing and signal reading out operations may occur simultaneously instead of successively.

Abstract: An image processing method includes: receiving an input image signal (IIS); doubling the IIS into frames; determining a TGM mode to control an order in which gamma curves (GC) are to be applied to the doubled IIS, the GCs including first and second GCs; applying the GCs to the doubled IIS based on the TGM mode to generate a doubled, TGM-processed image signal (DTIS); correcting the DTIS to generate a corrected image signal (CIS); and dither-processing the CIS to generate an output image signal. The dither-processing of the CIS includes: performing dither-processing by sequentially applying dithering patterns (DP) of a first DP set to the CIS in association with first ones of the frames with respect to the first GC, and performing the dither-processing by sequentially applying DPs of a second DP set to the CIS in association with second ones of the frames with respect to the second GC.

Abstract: Embodiments of the present invention provide an approach for improving overall chip speed by providing one or more sampling circuits in an ROIC so that signal processing and signal reading out operations may occur simultaneously instead of successively.