Patents by Inventor Jinxia GUO

Jinxia GUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11540584
    Abstract: The present disclosure discloses an intelligent hair growth helmet, and relates to the field of medical instruments. The intelligent hair growth helmet includes a helmet outer shell; an inner housing is fixedly mounted in the helmet outer shell; a plurality of supporting pipes are uniformly and fixedly mounted on the inner housing; U-shaped supporting plates are fixedly mounted on inner walls of two sides of the inner housing; a plurality of mounting holes are formed in the two U-shaped supporting plates; the same cushion block is slidably sleeved in two mounting holes on the same side; two mounting shafts are symmetrically and fixedly mounted on the cushion block.
    Type: Grant
    Filed: December 30, 2021
    Date of Patent: January 3, 2023
    Inventor: Jinxia Guo
  • Publication number: 20220117346
    Abstract: The present disclosure discloses an intelligent hair growth helmet, and relates to the field of medical instruments. The intelligent hair growth helmet includes a helmet outer shell; an inner housing is fixedly mounted in the helmet outer shell; a plurality of supporting pipes are uniformly and fixedly mounted on the inner housing; U-shaped supporting plates are fixedly mounted on inner walls of two sides of the inner housing; a plurality of mounting holes are formed in the two U-shaped supporting plates; the same cushion block is slidably sleeved in two mounting holes on the same side; two mounting shafts are symmetrically and fixedly mounted on the cushion block.
    Type: Application
    Filed: December 30, 2021
    Publication date: April 21, 2022
    Inventor: Jinxia Guo
  • Patent number: 9791790
    Abstract: The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.
    Type: Grant
    Filed: January 3, 2014
    Date of Patent: October 17, 2017
    Assignee: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
    Inventors: Jinmin Li, Junxi Wang, Qingfeng Kong, Jinxia Guo, Xiaoyan Yi
  • Publication number: 20170033098
    Abstract: The present disclosure involves a GaN-based Schottky diode rectifier and a method of manufacturing the same. The GaN-based Schottky diode rectifier includes: a substrate, on which a GaN intrinsic layer and a barrier layer are grown in turn; a p-type two-dimension electron gas depletion layer located on an upper surface of the barrier layer; a cathode electrode located at a position on the upper surface of the barrier layer where is different from the position where the p-type two-dimension electron gas depletion layer is formed; and an anode electrode including a first part and a second part electrically connected to each other.
    Type: Application
    Filed: November 26, 2013
    Publication date: February 2, 2017
    Inventors: Zhi HE, Junxi WANG, Wei YAN, Jinxia GUO, Xiaoyan YI, Zhongchao FAN
  • Publication number: 20160201220
    Abstract: The present invention discloses a method of forming a polygon-sectional rodlike ingot having an orientation marker or rounded corners, a rodlike ingot and a sheet substrate so formed. The method comprises: selecting one of sides of the polygon-sectional rodlike ingot that is parallel to an axial direction thereof as a first feature of a surface orientation marker; forming a minisize notch, which is parallel to an edge, in the one of sides selected as the first feature in the axial direction of the rodlike ingot, as a second feature of the orientation marker; and processing the rodlike ingot to form rounded corners. The sheet substrate is obtained by cutting the rodlike ingot.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 14, 2016
    Inventors: Jinmin LI, Junxi WANG, Xiaoyan YI, Qingfeng KONG, Wenjun WANG, Qiang HU, Jianchang YAN, Tongbo WEI, Ping MA, Hongxi LU, Panfeng JI, Jinxia GUO
  • Publication number: 20160170317
    Abstract: The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.
    Type: Application
    Filed: January 3, 2014
    Publication date: June 16, 2016
    Inventors: Jinmin LI, Junxi WANG, Qingfeng KONG, Jinxia GUO, Xiaoyan YI
  • Patent number: D988523
    Type: Grant
    Filed: January 5, 2022
    Date of Patent: June 6, 2023
    Inventor: Jinxia Guo