Abstract: An inspection system of semiconductor device includes a light source for producing a light beam, a lens module including at least one metalens, a receiver, and a processor. During an inspection process, the light beam emitted from the light source is focused on a target object by the metalens of the lens module and is reflected to form a reflected light by the target object. The receiver is used for receiving the reflected light. The processor is used for receiving an electric signal corresponding to the reflected light and generating an inspection result.

Abstract: The present invention provides a method for calibrating verticality of a particle beam. The method includes: providing a baseplate having a first sensor and a second sensor; emitting the particle beam to the first sensor of the baseplate from an emitter, such that a first datum is collected when the first sensor receives the particle beam; emitting the particle beam to the second sensor of the baseplate from the emitter, such that a second datum is collected when the second sensor receives the particle beam; calculating a first calibrating datum based on the first datum and the second datum; and adjusting the baseplate or the emitter based on the first calibrating datum if the first calibrating datum is out of a first predetermined range.

Abstract: An inspection system of semiconductor device includes a light source for producing a light beam, a lens module including at least one metalens, a receiver, and a processor. During an inspection process, the light beam emitted from the light source is focused on a target object by the metalens of the lens module and is reflected to form a reflected light by the target object. The receiver is used for receiving the reflected light. The processor is used for receiving an electric signal corresponding to the reflected light and generating an inspection result.

Abstract: The present invention provides a method for calibrating verticality of a particle beam. The method includes: providing a baseplate having a first sensor and a second sensor; emitting the particle beam to the first sensor of the baseplate from an emitter, such that a first datum is collected when the first sensor receives the particle beam; emitting the particle beam to the second sensor of the baseplate from the emitter, such that a second datum is collected when the second sensor receives the particle beam; calculating a first calibrating datum based on the first datum and the second datum; and adjusting the baseplate or the emitter based on the first calibrating datum if the first calibrating datum is out of a first predetermined range.

Abstract: A method for detecting defects in high-aspect-ratio channel holes, via holes or trenches is disclosed. First, a substrate having thereon a film stack and a plurality of deep features in the film stack is provided. At least one of the plurality of deep features comprises a defect. The substrate is then subjected to an optical inspection process. The substrate is illuminated by a broadband light beam. Some of the broadband DUV light beam scattered and/or reflected from the substrate is collected by a detector, thereby producing a bright-field illumination image of the plurality of deep features in the film stack.

Abstract: A method for detecting defects in deep features like channel holes, via holes or trenches based on laser-enhanced electron tunneling effect. A substrate having thereon a film stack is provided. First and second deep features are formed in the film stack. The first deep feature has a sacrificial oxide layer disposed at its bottom. The second deep feature comprises an under-etch defect. The sacrificial oxide layer has a thickness of less than 50 angstroms. The substrate is subjected to a laser-enhanced electron beam inspection process. The substrate is scanned by an electron beam and illuminated by a laser beam. The laser beam induces electron tunneling across the sacrificial protection layer, thereby capturing a bright voltage contrast (BVC) signal corresponding to the first deep feature, and detecting a dark voltage contrast (DVC) signal corresponding to the second deep feature.

Abstract: A motherboard includes a resistor, a display card controller, first and second display connectors, and a signal switch chip. A display device is connected to either the first or second display connector. A detecting pin of the first display connector is connected to a power source through the resistor. The signal switch chip is connected between the display card controller and each of the first display connector and the second display connector.

Abstract: A motherboard (100) in accordance with a preferred embodiment includes an audio connection area (10) defining a first jack layout (12). The first jack layout integrates second and third jack layouts for two audio connectors of different specifications, so that jacks (121, 122) of the first jack layout can selectively connect with the audio connectors.

Abstract: A motherboard (100) in accordance with a preferred embodiment includes an audio connection area (10) defining a first jack layout (12). The first jack layout integrates second and third jack layouts for two audio connectors of different specifications, so that jacks (121, 122) of the first jack layout can selectively connect with the audio connectors.