Abstract: A cross-coupling control method for moving beam of gantry machine tool is disclosed, which relates to the technical field of CNC machine tool control. The cross-coupling control method includes: Step 1: establishing a crossbeam dynamics model considering a ram on the crossbeam, and at the same time simplifying the model for an observer design; step 2: realizing a PID control parameter adjustment of motors at both ends in accordance with a method of parameter tuning of a unilateral servo control system; using a servo system with the same control parameters to jointly drive the crossbeam up and down, realizing the synchronous control and realizing PID control parameter tuning for both end motors. The disclosure not only reduces the synchronization error caused by the torsion of the crossbeam, but also solves the synchronization error caused by the asymmetric load on both sides, and improves the system robustness and stability.

Abstract: An image guided radiotherapy apparatus and a control method are provided. According to a specific embodiment, the radiotherapy apparatus includes: a treatment unit, which includes a treatment head for generating radiation beam for radiotherapy; an imaging unit for imaging a target area of a patient, wherein the imaging unit is integrated mounted with the treatment head. The radiotherapy apparatus of the present invention can be applicable to both extracorporeal and intraoperative radiotherapy, and has a high radiotherapy accuracy.

Abstract: The present disclosure provides a thin film assembly and a method of preparing the same, and a hetero-junction cell including a thin film assembly. The thin film assembly comprises at least two transparent conductive oxide film layers superposed together, each of the at least two transparent conductive oxide film layers is an ITO film, the first ITO film layer is doped with a tin content of 10-15 wt %, and the second ITO film layer is doped with a tin content?5 wt % and <10 wt %.

Abstract: A method for soldering hetero-junction with intrinsic thin layer solar cells together to form a string, includes soldering solar cells, and judging whether a temperature in a soldering chamber is within a preset temperature range every preset time; if the temperature is within the preset temperature range, continuing to solder; and if the temperature is beyond the preset temperature range, regulating the temperature in the soldering chamber to be within the preset temperature range, and continuing to solder the solar cells.

Abstract: A wafer supporting apparatus includes: a first fixed plate and a second fixed plate, a first upper fixing rod and a second upper fixing rod, and a lower fixing rod parallel to and below the first upper fixing rod and the second upper fixing rod. Two ends of the first upper fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. Two ends of the second upper fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. Two ends of the lower fixing rod are fixedly connected to the first fixed plate and the second fixed plate respectively. The first upper fixing rod and the second upper fixing rod are each provided with a plurality of limiting columns each of which including a cylindrical body and a semispherical end.

Abstract: The present invention discloses a preparation method of a heterojunction solar cell and the heterojunction solar cell. The method comprises: providing a substrate; respectively depositing intrinsic layers at two sides of the substrate; respectively depositing n-type doped layers and p-type doped layers on the intrinsic layers at two sides of the substrate, wherein at least two n-type doped layers and/or p-type doped layers are provided, and the doping concentration of each layer of the n-type doped layers and/or the p-type doped layers is gradually increased in a longitudinal direction away from the substrate; and respectively and sequentially forming transparent conductive oxide layers and electrode layers on the n-type doped layers and the p-type doped layers. Therefore, the conversion and production efficiencies of the cell are increased.

Abstract: In one aspect of the invention, the bend insensitive single-mode optical fiber includes a core layer and cladding layers having an inner cladding layer, a trench cladding layer and an outer cladding layer sequentially formed surrounding the core layer from inside to outside. For the core layer, the diameter is 7-7.9 ?m, and the relative refractive index difference ?1 is between 4.6×10?3 and 6.0×10?3. For the inner cladding layer, the diameter is 15-17 ?m, and a relative refractive index difference ?2 is between ?3×10?4 and 3×10?4. For the trench cladding layer, the diameter is 24-33 ?m, and the relative refractive index difference ?3 is between ?2.9×10?3 and ?7.3×10?3, changes in a gradient manner and increases gradually from outside to inside, where a relative refractive index difference ?32 at an outermost interface is smaller than a relative refractive index difference ?31 at an innermost interface.

Abstract: In one aspect of the invention, the bend insensitive single-mode optical fiber includes a core layer and cladding layers having an inner cladding layer, a trench cladding layer and an outer cladding layer sequentially formed surrounding the core layer from inside to outside. For the core layer, the diameter is 7-7.9 ?m, and the relative refractive index difference ?1 is between 4.6×10?3 and 6.0×10?3. For the inner cladding layer, the diameter is 15-17 ?m, and a relative refractive index difference ?2 is between ?3×10?4 and 3×10?4. For the trench cladding layer, the diameter is 24-33 ?m, and the relative refractive index difference ?3 is between ?2.9×10?3 and ?7.3×10?3, changes in a gradient manner and increases gradually from outside to inside, where a relative refractive index difference ?32 at an outermost interface is smaller than a relative refractive index difference ?31 at an innermost interface.

Abstract: A plasma microwave resonant cavity used for a plasma chemical vapor deposition (PCVD) apparatus comprises a resonant cavity housing and a waveguide device connected with the cavity housing. Two ends of the cavity housing are provided with coaxial through-holes along the axial direction of the cavity. A glass inner liner is arranged through the through-holes at the two ends, and runs through a cavity body and the through holes at the two ends. The glass inner liner comprises a glass cylinder and glass stop rings arranged at the two ends of the glass cylinder. One or two ends of the glass cylinder are provided with external threads. The glass stop rings are connected with the ends of the glass cylinder by screw holes formed on the glass stop rings.

Abstract: A plasma microwave resonant cavity used for a plasma chemical vapor deposition (PCVD) apparatus comprises a resonant cavity housing and a waveguide device connected with the cavity housing. Two ends of the cavity housing are provided with coaxial through-holes along the axial direction of the cavity. A glass inner liner is arranged through the through-holes at the two ends, and runs through a cavity body and the through holes at the two ends. The glass inner liner comprises a glass cylinder and glass stop rings arranged at the two ends of the glass cylinder. One or two ends of the glass cylinder are provided with external threads. The glass stop rings are connected with the ends of the glass cylinder (1) by screw holes formed on the glass stop rings.

Abstract: Digital-to-analog and analog-to-digital conversion are implemented in or using programmable logic. The DAC and ADC circuits may be hardwired in a programmable logic integrated circuit or may be implemented using an intellectual property (IP) core. The IP core would be a series of bits to configure the logic cells and other programmable logic of an integrated circuit to include one or more DACs or ADC, or both on the same integrated circuit. The DAC may be a sigma-delta-modulator-based implementation or a resistor-ladder-based implementation.

Abstract: Digital-to-analog and analog-to-digital conversion are implemented in or using programmable logic. The DAC and ADC circuits may be hardwired in a programmable logic integrated circuit or may be implemented using an intellectual property (IP) core. The IP core would be a series of bits to configure the logic cells and other programmable logic of an integrated circuit to include one or more DACs or ADC, or both on the same integrated circuit. The DAC may be a sigma-delta-modulator-based implementation or a resistor-ladder-based implementation.

Abstract: Digital-to-analog and analog-to-digital conversion are implemented in or using programmable logic. The DAC and ADC circuits may be hardwired in a programmable logic integrated circuit or may be implemented using an intellectual property (IP) core. The IP core would be a series of bits to configure the logic cells and other programmable logic of an integrated circuit to include one or more DACs or ADC, or both on the same integrated circuit. The DAC may be a sigma-delta-modulator-based implementation or a resistor-ladder-based implementation.

Abstract: Digital-to-analog and analog-to-digital conversion are implemented in or using programmable logic. The DAC and ADC circuits may be hardwired in a programmable logic integrated circuit or may be implemented using an intellectual property (IP) core. The IP core would be a series of bits to configure the logic cells and other programmable logic of an integrated circuit to include one or more DACs or ADC, or both on the same integrated circuit. The DAC may be a sigma-delta-modulator-based implementation or a resistor-ladder-based implementation.