Patents by Inventor Jinyeol LEE

Jinyeol LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device and method of fabricating the same
    Patent number: 11825755
    Abstract: The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer.
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: November 21, 2023
    Assignees: SK hynix Inc., UIF (University Industry Foundation), Yonsei University
    Inventors: Woo Young Park, Hyunchul Sohn, Jinyeol Lee, Taeho Kim
  • NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20220231222
    Abstract: The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer.
    Type: Application
    Filed: April 8, 2022
    Publication date: July 21, 2022
    Inventors: Woo Young PARK, Hyunchul SOHN, Jinyeol LEE, Taeho KIM
  • Non-volatile memory device and method of fabricating the same
    Patent number: 11329220
    Abstract: The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: May 10, 2022
    Assignees: SK hynix Inc., UIF (University Industry Foundation), Yonsei University
    Inventors: Woo Young Park, Hyunchul Sohn, Jinyeol Lee, Taeho Kim
  • NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20210066583
    Abstract: The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer.
    Type: Application
    Filed: September 1, 2020
    Publication date: March 4, 2021
    Inventors: Woo Young PARK, Hyunchul SOHN, Jinyeol LEE, Taeho KIM