Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

Abstract: Discussed is a display apparatus including a display panel, and a back cover coupled to a rear surface of the display panel. The back cover includes a hemming part formed to face a rear surface of the back cover by bending at least a portion of the back cover.

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Abstract: Discussed is a display apparatus including a display panel, and a back cover coupled to a rear surface of the display panel. The back cover includes a hemming part formed to face a rear surface of the back cover by bending at least a portion of the back cover.

Abstract: A showerhead according to an embodiment of the present inventive concept includes an upper plate including a plurality of gas supply passages, a lower plate including a plurality of supply holes and a plurality of exhaust slots formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, connected to a plurality of exhaust slots and defining exhaust passages that are open at a side portion of the showerhead.

Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter.

Abstract: A showerhead according to an embodiment of the present inventive concept includes an upper plate including a plurality of gas supply passages, a lower plate including a plurality of supply holes and a plurality of exhaust slots formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, connected to a plurality of exhaust slots and defining exhaust passages that are open at a side portion of the showerhead.

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter.

Abstract: A semiconductor device includes a substrate, a stacked structure of insulating layers and gate electrodes alternately and repeatedly stacked on the substrate, and a pillar passing through the stacked-layer structure. The insulating layers include lower insulating layers, intermediate insulating layers disposed on the lower insulating layers, and upper insulating layers disposed on the intermediate insulating layers. The lower insulating layers have a hardness less than that of the intermediate insulating layers, and the upper insulating layers have a hardness greater than that of the intermediate insulating layers.

Abstract: A piezoelectric ultrasonic motor includes: a drive piezoelectric material wherein a plurality of piezoelectric elements, which are polarized by opposite polarities along a circumferential direction around a rotation shaft, are alternately arranged, and a vibration-control piezoelectric material wherein a plurality of piezoelectric elements, which are arranged along a circumferential direction around the rotation shaft and polarized by opposite polarities, are arranged to correspond to the plurality of piezoelectric elements of the drive piezoelectric material, wherein AC power and another AC power having a phase difference with respect to the AC power are respectively applied to the piezoelectric material and the vibration-control piezoelectric material, in a vibration damping area of the drive piezoelectric material.

Abstract: Methods for fabricating semiconductor devices are provided including forming a stacked structure including a first mold layer and a second mold layer on a substrate; forming a first photoresist pattern on the stacked structure; etching the second mold layer using the first photoresist pattern as a mask; forming a second photoresist pattern by etching a portion of the first photoresist pattern; measuring a first fringe signal generated by an interference phenomenon between first reflected lights reflected from the first photoresist pattern; forming a stepped structure by etching the second mold layer and the first mold layer which is exposed, using the second photoresist pattern as a mask; measuring a second fringe signal generated by an interference phenomenon between second reflected lights reflected from the second mold layer; calculating a third fringe signal by summing the first fringe signal and the second fringe signal; calculating and a first etch rate of an upper surface of the first photoresist patte

Abstract: A semiconductor device includes a substrate, a stacked structure of insulating layers and gate electrodes alternately and repeatedly stacked on the substrate, and a pillar passing through the stacked-layer structure. The insulating layers include lower insulating layers, intermediate insulating layers disposed on the lower insulating layers, and upper insulating layers disposed on the intermediate insulating layers. The lower insulating layers have a hardness less than that of the intermediate insulating layers, and the upper insulating layers have a hardness greater than that of the intermediate insulating layers.

Abstract: An optical device includes a lens assembly that performs a forward/backward movement in an optical axis direction. The optical device also includes at least one first driving device that generates a first driving force that causes the lens assembly to perform the forward/backward movement in the optical axis direction. The optical device further includes at least one second driving device that generates a second driving force in a direction that is opposite to the moving direction of the lens assembly. The second driving force may be formed to be equal to or smaller than the first driving force so that the reciprocating amplitude of the lens assembly may be reduced when the lens assembly reciprocates before and after the focusing position. The optical device as described above may be variously implemented according to embodiments.

Abstract: A transmitter for transmitting wireless power and a wireless power transmitting system having the same in the present invention includes at least one helical or spiral type coil in which one end thereof is in a grounded state and the other end is in the air, wherein the coil wirelessly transmits the power by resonance. The present invention has simpler structure and operates with low frequencies as compared with the existing wireless power transmitting scheme using magnetic resonance, thereby to enhance the efficiency of the power transfer, to reduce the cost for system building, and to easily implement a transmitting section with the multi-channel.

Abstract: An optical adjusting apparatus having an optical adjusting lens to perform image stabilization and auto focusing includes a base supporting a lens barrel on which the optical adjusting lens is mounted, a first driver to move the lens barrel in a first direction, a plurality of first ball bearings disposed between the base and the first driver, a second driver to move the lens barrel in a second direction that is perpendicular to the first direction, and a plurality of second ball bearings disposed between the first driver and the second driver.

Abstract: A piezoelectric ultrasonic motor includes: a drive piezoelectric material wherein a plurality of piezoelectric elements, which are polarized by opposite polarities along a circumferential direction around a rotation shaft, are alternately arranged, and a vibration-control piezoelectric material wherein a plurality of piezoelectric elements, which are arranged along a circumferential direction around the rotation shaft and polarized by opposite polarities, are arranged to correspond to the plurality of piezoelectric elements of the drive piezoelectric material, wherein AC power and another AC power having a phase difference with respect to the AC power are respectively applied to the piezoelectric material and the vibration-control piezoelectric material, in a vibration damping area of the drive piezoelectric material.

Abstract: An optical device includes a lens assembly that performs a forward/backward movement in an optical axis direction. The optical device also includes at least one first driving device that generates a first driving force that causes the lens assembly to perform the forward/backward movement in the optical axis direction. The optical device further includes at least one second driving device that generates a second driving force in a direction that is opposite to the moving direction of the lens assembly. The second driving force may be formed to be equal to or smaller than the first driving force so that the reciprocating amplitude of the lens assembly may be reduced when the lens assembly reciprocates before and after the focusing position. The optical device as described above may be variously implemented according to embodiments.

Abstract: A substrate processing system and a method of coating a ceramic layer therewith are provided. The system may include a chamber and a ceramic layer on an inner surface of the chamber. The ceramic layer may include yttrium oxyfluoride (YxOyFz), where x=1, y=1, 2, and z=1, 2.