Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: A vehicle lamp that achieves a slim design while forming an optimal beam pattern generates a beam pattern using a plurality of lamp modules. The plurality of lamp modules are arranged in one direction, and each of the plurality of lamp modules includes a light source that generate light; an optical guide unit, which guides incident light from the light source to be emitted forward; and an optical lens, which transmits the incident light from the optical guide unit therethrough to allow the beam pattern to be generated.

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes: a window; a first pattern on a portion of the window; a second pattern on at least a portion of the first pattern and having a higher surface free energy than the first pattern; an adhesive layer on the window, at least a portion of the adhesive layer being on the second pattern to be in contact with a surface of the second pattern; and a display panel on the adhesive layer.

Abstract: Power semiconductor device with reduced loss and manufacturing method the same disclosed. Power semiconductor device include a first drift region of a first conductivity type, a second drift region of the first conductivity type formed by epitaxially growing on the first drift region and a plurality of buried ion regions of a second conductivity type formed to be buried in the second drift region.

Abstract: Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereof disclosed. The power semiconductor device includes a drift region of a first conductivity type, a plurality of body regions of a second conductivity type, being formed to be spaced apart from each other with a preset WS in a horizontal direction in an upper region of the drift region, a JFET region of the first conductivity type and a low-resistance region of the first conductivity type, being formed in a separation space between adjacent body regions to contact their side surfaces with the adjacent body regions and a source region of the first conductivity type, being formed in a surface region in the body region in contact with the low-resistance region to be spaced apart from the low-resistance region by a preset channel length.

Abstract: The present invention relates to a perovskite solar cell and a tandem solar cell comprising the same, characterized in that the perovskite solar cell comprises: a substrate; a transparent electrode; a hole transport layer; a perovskite light absorption layer, an electron transport layer; and a metal electrode, wherein the electron transport layer is a graded thin film in which a chemical binding state of elements constituting the electron transport layer gradually changes from the lower portion thereof toward the upper portion thereof.

Abstract: A vehicle lamp that achieves a slim design while forming an optimal beam pattern generates a beam pattern using a plurality of lamp modules. The plurality of lamp modules are arranged in one direction, and each of the plurality of lamp modules includes a light source that generate light; an optical guide unit, which guides incident light from the light source to be emitted forward; and an optical lens, which transmits the incident light from the optical guide unit therethrough to allow the beam pattern to be generated.

Abstract: Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereof disclosed. The power semiconductor device includes a drift region of a first conductivity type, a plurality of body regions of a second conductivity type, being formed to be spaced apart from each other with a preset WS in a horizontal direction in an upper region of the drift region, a JFET region of the first conductivity type and a low-resistance region of the first conductivity type, being formed in a separation space between adjacent body regions to contact their side surfaces with the adjacent body regions and a source region of the first conductivity type, being formed in a surface region in the body region in contact with the low-resistance region to be spaced apart from the low-resistance region by a preset channel length.

Abstract: A fine particle separating apparatus includes a first filter having a first mesh, the first filter having a first section and a second section with the first mesh therebetween and rotatably mounted in the first filter part. A first flow path allows sludge to flow into the first filter, a second flow path allows an effluent from the first filter party to flow therein, and a third flow path is provided to discharge the effluent from the second flow path to the outside. At least a portion of the effluent flowing into the second flow path is provided to the first filter part in a fluid loop along a fourth flow path, and a fifth flow path is defined in the first section to allow the effluent from the fourth flow path to pass through the first filter part. A storage tank and a pump are also provided.

Abstract: A lamp module includes a light source unit that generates light; and a light guide unit that emits at least a portion of the light incident from the light source unit to generate a beam pattern. The light guide unit comprises a light incident portion configured to receive at least a portion of the light incident from the light source unit; a light emitting portion configured to emit at least a portion of the light incident through the light incident portion; and a transmission portion disposed between the light incident portion and the light emitting portion and configured to transmit at least a portion of the light incident through the light incident portion to the light emitting portion. The transmission portion comprises a shield portion including an edge portion formed along a rear focal plane of the light emitting portion and configured to obstruct a portion of the light.

Abstract: The present invention relates to a biaryl derivative compound, which exhibits the activity of a diacylglycerol acyltransferase 2 (DGAT2) inhibitor and is represented by chemical formula (1), a pharmaceutical composition comprising same as an active ingredient, and a use thereof.

Abstract: Power semiconductor device with reduced loss and manufacturing method the same disclosed. Power semiconductor device include a first drift region of a first conductivity type, a second drift region of the first conductivity type formed by epitaxially growing on the first drift region and a plurality of buried ion regions of a second conductivity type formed to be buried in the second drift region.

Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: A lamp module includes a light source unit that generates light; and a light guide unit that emits at least a portion of the light incident from the light source unit to generate a beam pattern. The light guide unit comprises a light incident portion configured to receive at least a portion of the light incident from the light source unit; a light emitting portion configured to emit at least a portion of the light incident through the light incident portion; and a transmission portion disposed between the light incident portion and the light emitting portion and configured to transmit at least a portion of the light incident through the light incident portion to the light emitting portion. The transmission portion comprises a shield portion including an edge portion formed along a rear focal plane of the light emitting portion and configured to obstruct a portion of the light.

Abstract: Power semiconductor device capable of controlling slope of current and voltage during dynamic switching disclosed. The power semiconductor device may include a semiconductor substrate and a cell array being consisted of a plurality of transistor cells on an active area, wherein each of the plurality of transistor cells may include an emitter region, a body region, a contact region and a gate region, wherein non-uniform threshold voltages may be respectively set in the plurality of transistor cells constituting the cell array, wherein a gate signal may be applied to each of the plurality of transistor cells through an input/output unit, wherein the input/output unit may include a first gate signal path configured for supplying a gate charging current to the gate regions in each of the plurality of transistor cells and a second gate signal path configured for discharging a gate discharging current from the gate region.

Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: Provided is a photocathode structure including: a photocathode including silicon (Si); an intermediate layer formed on the photocathode, and including a silicon oxide (SiOx); and a protective layer foiled on the intermediate layer, and including a metal oxide, wherein the intermediate layer is a tunneling barrier configured to transfer charges from the photocathode to the protective layer by an electric field applied from an outside.

Abstract: The present invention relates to an amide derivative compound, which exhibits the activity of a diacylglycerol acyltransferase (DGAT) 2 inhibitor and is represented by chemical formula (1), a pharmaceutical composition comprising same as an active ingredient, and a use thereof.

Abstract: The present invention relates to an amino aryl derivative compound, represented by chemical formula (1) and exhibiting the activity of a diacylglycerol acyltransferase 2 (DGAT2) inhibitor, a pharmaceutical composition comprising same as an active ingredient, and a use thereof.

Abstract: A slim type lamp apparatus of a vehicle may include a light source for radiating light; and a lens portion including an incident portion through which the light radiated by the light source is incident, a reflection portion extending from the incident portion to reflect and move the incident light, and an emission portion extending from the reflection portion and emitting the light reflected by the reflection portion, the reflection portion diffusing some light upon reflection of the light to form a diffusion beam pattern by the emission portion and condensing other light upon reflection to form a condensing beam pattern by the emission portion.