Patents by Inventor Jinyu TONG

Jinyu TONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and structures for semiconductor device testing
    Patent number: 11982709
    Abstract: A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.
    Type: Grant
    Filed: May 20, 2022
    Date of Patent: May 14, 2024
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Lin Qi, Xiaoqiong Du, Juan Wang, Jinyu Tong
  • METHODS AND STRUCTURES FOR SEMICONDUCTOR DEVICE TESTING
    Publication number: 20230375616
    Abstract: A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.
    Type: Application
    Filed: May 20, 2022
    Publication date: November 23, 2023
    Inventors: Lin QI, Xiaoqiong DU, Juan WANG, Jinyu TONG