Patents by Inventor Jinyuan An
Jinyuan An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230170860Abstract: The present disclosure discloses a Doherty power amplifier, including at least one carrier power amplifier and at least one peak power amplifier connected in parallel, each carrier power amplifier includes at least one carrier power amplifier unit connected in parallel for power combination, and each peak power amplifier includes at least one peak power amplifier unit connected in parallel for power combination, each of the carrier power amplifier unit and the peak power amplifier unit includes two power amplifier circuits connected in parallel for power combination, and each of the two power amplifier circuits includes a medium-low power amplifier transistor having saturation power less than or equal to a preset threshold. The present disclosure further discloses a power amplification method.Type: ApplicationFiled: June 22, 2021Publication date: June 1, 2023Inventors: Huazhang CHEN, Xiaojun CUI, Ting HOU, Jinyuan AN
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Publication number: 20160294339Abstract: A power supply method and device for a radio-frequency power amplifier are provided.Type: ApplicationFiled: June 10, 2014Publication date: October 6, 2016Inventors: Huazhang CHEN, Gang WANG, Jinyuan AN
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Patent number: 9331638Abstract: Disclosed is a Doherty power amplifier apparatus, including: a drive amplifier circuit, a power splitter circuit and a power combiner circuit, wherein the power splittercircuit is connected to the drive amplifier circuit, the apparatus further comprising: a carrier amplifier circuit and a peak amplifier circuit connected in parallel between the power splitter circuit and the power combiner circuit, wherein the carrier amplifier circuit comprises one or more parallel carrier amplification branches, wherein each carrier amplification branch comprises a multi-stage carrier amplifier apparatus, the multi-stage carrier amplifier apparatus is used for achieving multi-stage carrier amplification; and the peak amplifier circuit comprises one or more parallel peak amplification branches, wherein each peak amplification branch comprises a multi-stage peak amplifier apparatus, the multi-stage peak amplifier apparatus is used for achieving multi-stage peak amplification.Type: GrantFiled: October 26, 2011Date of Patent: May 3, 2016Assignee: ZTE CorproationInventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui
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Publication number: 20150349719Abstract: Disclosed is a Doherty power amplifier apparatus, including: a drive amplifier circuit, a power splitter circuit and a power combiner circuit, wherein the power splittercircuit is connected to the drive amplifier circuit, the apparatus further comprising: a carrier amplifier circuit and a peak amplifier circuit connected in parallel between the power splitter circuit and the power combiner circuit, wherein the carrier amplifier circuit comprises one or more parallel carrier amplification branches, wherein each carrier amplification branch comprises a multi-stage carrier amplifier apparatus, the multi-stage carrier amplifier apparatus is used for achieving multi-stage carrier amplification; and the peak amplifier circuit comprises one or more parallel peak amplification branches, wherein each peak amplification branch comprises a multi-stage peak amplifier apparatus, the multi-stage peak amplifier apparatus is used for achieving multi-stage peak amplification.Type: ApplicationFiled: October 26, 2011Publication date: December 3, 2015Applicant: ZTE CORPORATIONInventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui
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Publication number: 20140218116Abstract: The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and the final stage power amplifier circuit uses high electron mobility transistor (HEMT) power amplifiers to achieve a Carrier amplifier with the Doherty circuit structure and a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.Type: ApplicationFiled: October 28, 2011Publication date: August 7, 2014Applicant: ZTE CORPORATIONInventors: Xiaojun Cui, Huazhang Chen, Jianli Liu, Jinyuan An
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Patent number: 8797099Abstract: The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.Type: GrantFiled: October 28, 2011Date of Patent: August 5, 2014Assignee: ZTE CorporationInventors: Xiaojun Cui, Huazhang Chen, Jinyuan An, Jianli Liu
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Publication number: 20140125415Abstract: The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.Type: ApplicationFiled: October 28, 2011Publication date: May 8, 2014Applicant: ZTE CORPORATIONInventors: Xiaojun Cui, Huazhang Chen, Jinyuan An, Jianli Liu
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Patent number: 8710923Abstract: A control method and apparatus of a peak amplifier of a Doherty power amplifier are disclosed, wherein, the control apparatus includes a Radio Frequency (RF) switching circuit in a peak amplification branch of the Doherty power amplifier, which is used to control the turn-on and turn-off of the peak amplifier in the peak amplification branch. The method and apparatus avoid a disadvantage that the peak branch in the Doherty power amplifier is turned on ahead of time, thus reducing the power consumption of the peak power amplifier, and enhancing the mass efficiency of the whole power amplifier; and largely reducing the product expense and production expense of the power amplifier compared to the scheme of some manufacturers improving on-time of the peak power amplifier using complex digital circuits.Type: GrantFiled: October 27, 2011Date of Patent: April 29, 2014Assignee: ZTE CorporationInventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui
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Publication number: 20140035679Abstract: The present invention relates to a power amplifier apparatus and power amplifier circuit thereof, and the power amplifier circuit uses the Doherty circuit structure, and the power amplifier circuit uses high voltage heterojunction bipolor transistor (HVHBT) power amplifiers to achieve a carrier amplifier and a peak amplifier of the Doherty circuit structure. The power amplifier apparatus and power amplifier circuit thereof in the present invention improves the efficiency of the power amplification.Type: ApplicationFiled: October 27, 2011Publication date: February 6, 2014Applicant: ZTE CORPORATIONInventors: Huazhang Chen, Xiaojun Cui, Jianli Liu, Jinyuan An
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Publication number: 20130222065Abstract: A Doherty power amplifier apparatus and a power amplification method are disclosed in the present invention. The apparatus includes an auxiliary power amplifier apparatus and a main power amplifier apparatus, wherein the auxiliary power amplifier apparatus is configured to amplify signal power by using a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device; the main power amplifier is configured to amplify signal power by using a High voltage heterojunction bipolar transistor (HVHBT) device. An HVHBT device is adopted as a main power amplifier in the present invention. By use of the present invention, a power amplification efficiency of a main power amplifier in a Doherty power amplifier may be enhanced compared with an existing Doherty power amplifier in which both a main power amplifier and an auxiliary power amplifier use LDMOS, thereby a power amplification efficiency of the whole Doherty power amplifier is substantially increased.Type: ApplicationFiled: October 27, 2011Publication date: August 29, 2013Applicant: ZTE CORPORATIONInventors: Huazhang Chen, Jinyuan An, Jianli Liu, Xiaojun Cui
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Publication number: 20130127527Abstract: A control method and apparatus of a peak amplifier of a Doherty power amplifier are disclosed, wherein, the control apparatus includes a Radio Frequency (RF) switching circuit in a peak amplification branch of the Doherty power amplifier, which is used to control the turn-on and turn-off of the peak amplifier in the peak amplification branch. The method and apparatus avoid a disadvantage that the peak branch in the Doherty power amplifier is turned on ahead of time, thus reducing the power consumption of the peak power amplifier, and enhancing the mass efficiency of the whole power amplifier; and largely reducing the product expense and production expense of the power amplifier compared to the scheme of some manufacturers improving on-time of the peak power amplifier using complex digital circuits.Type: ApplicationFiled: October 27, 2011Publication date: May 23, 2013Applicant: ZTE CORPORATIONInventors: Huazhang Chen, Jianli Liu, Jinyuan An, Xiaojun Cui