Patents by Inventor Jinzhuan Zhu

Jinzhuan Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DIFFUSED FIELD-EFFECT TRANSISTOR
    Publication number: 20210217878
    Abstract: A diffused field-effect transistor (FET) is disclosed. The diffused FET is dually optimized in voltage resistance by incorporating both a trench isolation structure and a thick second oxide layer and thus has a more significantly improved breakdown voltage. With the thick second oxide layer ensuring suitable voltage resistance of the transistor device, its on-resistance can be reduced either by reducing the size of the trench isolation structure or increasing an ion dopant concentration of a drift region. As such, a good tradeoff between voltage resistance and on-resistance is achievable.
    Type: Application
    Filed: March 26, 2021
    Publication date: July 15, 2021
    Inventors: Menghui WANG, Ching-Ming LEE, Jinzhuan ZHU
  • Diffused field-effect transistor and method of fabricating same
    Patent number: 11024722
    Abstract: A diffused field-effect transistor (FET) and a method of fabricating same are disclosed. The diffused FET is dually optimized in voltage resistance by incorporating both a trench isolation structure and a thick second oxide layer and thus has a more significantly improved breakdown voltage. With the thick second oxide layer ensuring suitable voltage resistance of the transistor device, its on-resistance can be reduced either by reducing the size of the trench isolation structure or increasing an ion dopant concentration of a drift region. As such, a good tradeoff between voltage resistance and on-resistance is achievable.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: June 1, 2021
    Assignee: NEXCHIP SEMICONDUCTOR CORPORATION
    Inventors: Menghui Wang, Ching-Ming Lee, Jinzhuan Zhu