Patents by Inventor Jinzo Watanabe

Jinzo Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxide film forming method
    Patent number: 6949478
    Abstract: A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles.
    Type: Grant
    Filed: April 11, 2002
    Date of Patent: September 27, 2005
    Inventors: Tadahiro Ohmi, Takashi Imaoka, Hisayuki Shimada, Nobuhiro Konishi, Mizuho Morita, Takeo Yamashita, Tadashi Shibata, Hidetoshi Wakamatsu, Jinzo Watanabe, Shintaro Aoyama, Masakazu Nakamura
  • Oxide film forming method
    Publication number: 20050206018
    Abstract: Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are moveable among them and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.
    Type: Application
    Filed: May 13, 2005
    Publication date: September 22, 2005
    Inventors: Tadahiro Ohmi, Takashi Imaoka, Hisayuki Shimada, Nobuhiro Konishi, Mizuho Morita, Takeo Yamashita, Tadashi Shibata, Hidetoshi Wakamatsu, Jinzo Watanabe, Shintaro Aoyama, Masakazu Nakamura
  • Oxide film forming method
    Publication number: 20030073278
    Abstract: Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are movable among them, and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.
    Type: Application
    Filed: April 11, 2002
    Publication date: April 17, 2003
    Inventors: Tadahiro Ohmi, Takashi Imaoka, Hisayuki Shimada, Nobuhiro Konishi, Mizuho Morita, Takeo Yamashita, Tadashi Shibata, Hidetoshi Wakamatsu, Jinzo Watanabe, Shintaro Aoyama, Masakazu Nakamura
  • Oxide film forming method
    Patent number: 6146135
    Abstract: Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are movable among them, and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.
    Type: Grant
    Filed: July 9, 1996
    Date of Patent: November 14, 2000
    Assignees: Tadahiro Ohmi, Takasago Netsugaku Kogyo Kabushiki Kaisha
    Inventors: Jinzo Watanabe, Takeo Yamashita, Masakazu Nakamura, Shintaro Aoyama, Hidetoshi Wakamatsu, Tadashi Shibata, Tadahiro Ohmi, Nobuhiro Konishi, Mizuho Morita, Hisayuki Shimada, Takashi Imaoka
  • Method of making a semiconductor memory device
    Patent number: 4978635
    Abstract: The present invention provides a semiconductor memory device comprising a MOSFET (16) and a storage capacity element (15) and performing data writing/reading.The MOSFET (16) is formed on a main surface of a silicon substrate (1) and a storage capacity element (15) is formed on a surface of the reverse side of the silicon substrate (1). The MOSFET (16) comprises source and drain regions (3, 4) formed on the main surface of the silicon substrate (1), a channel region (17) positioned therebetween and a word line forming a gate electrode (9a).
    Type: Grant
    Filed: April 9, 1990
    Date of Patent: December 18, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Jinzo Watanabe
  • Semiconductor memory device with capacitor on opposite surface of substrate
    Patent number: 4959709
    Abstract: The present invention provides a semiconductor memory device comprising a MOSFET (16) and a storage capacity element (15) and performing data writing/reading.The MOSFET (16) is formed on a main surface of a silicon substrate (1) and a storage capacity element (15) is formed on a surface of the reverse side of the silicon substrate (1). The MOSFET (16) comprises source and drain regions (3, 4) formed on the main surface of the silicon substrate (1), a channel region (17) positioned therebetween and a word line forming a gate electrode (9a).
    Type: Grant
    Filed: November 28, 1988
    Date of Patent: September 25, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Jinzo Watanabe