Patents by Inventor Jiong Xiang

Jiong Xiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Long range ordered semiconductor interface phase and oxides
    Patent number: 6613677
    Abstract: A semiconductor processing method capable of producing highly ordered, ultra thin dielectrics, including gate oxide and other semiconductor dielectrics, and interphase phases with low defect density. The process includes a degrease step, an etch, primary oxidation and then a passivation step which utilizes hydrofluoric acid to passivate the cleaned silicon surface with hydrogen. Dielectric layers may then be formed with low interface defect density, low flat band voltages and low fixed charge on semiconductor substrates.
    Type: Grant
    Filed: October 19, 2000
    Date of Patent: September 2, 2003
    Assignee: Arizona Board of Regents
    Inventors: Nicole Herbots, Vasudeva P. Atluri, James D. Bradley, Banerjee Swati, Quinton B. Hurst, Jiong Xiang