Abstract: Methods and systems for selecting measurement locations on a wafer for subsequent detailed measurements employed to characterize the entire wafer are described herein. High throughput measurements are performed at a relatively large number of measurement sites on a wafer. The measurement signals are transformed to a new mathematical basis and reduced to a significantly smaller dimension in the new basis. A set of representative measurement sites is selected based on analyzing variation of the high throughput measurement signals. In some embodiments, the spectra are subdivided into a set of different groups. The spectra are grouped together to minimize variance within each group. Furthermore, a die location is selected that is representative of the variance exhibited by the die in each group. A spectrum of a measurement site and corresponding wafer location is selected to correspond most closely to the center point of each cluster.

Abstract: The disclosure relates to the technical field of vehicle accessories, and specifically provides an electric motor for a vehicle and a vehicle. The disclosure aims to solve the problems existing in an existing electric motor for a vehicle that during spraying and cooling of an outer surface of an iron core, a heat dissipation area of the outer surface of the iron core is small, and a cooling oil easily flows along an outer wall of a cooling oil ring, so that an end portion of a winding cannot be cooled.

Abstract: The disclosure relates to the technical field of vehicle accessories, and specifically provides an electric motor for a vehicle and a vehicle. The disclosure aims to solve the problems existing in an existing electric motor for a vehicle that during spraying and cooling of an outer surface of an iron core, a heat dissipation area of the outer surface of the iron core is small, and a convective heat transfer coefficient of a heat dissipation surface is small.

Abstract: Methods and systems for selecting measurement locations on a wafer for subsequent detailed measurements employed to characterize the entire wafer are described herein. High throughput measurements are performed at a relatively large number of measurement sites on a wafer. The measurement signals are transformed to a new mathematical basis and reduced to a significantly smaller dimension in the new basis. A set of representative measurement sites is selected based on analyzing variation of the high throughput measurement signals. In some embodiments, the spectra are subdivided into a set of different groups. The spectra are grouped together to minimize variance within each group. Furthermore, a die location is selected that is representative of the variance exhibited by the die in each group. A spectrum of a measurement site and corresponding wafer location is selected to correspond most closely to the center point of each cluster.