Abstract: Aspects of the present disclosure provide signal amplification. An example method generally includes amplifying a version of a first input signal with a power amplifier in a first state where a bias voltage of the power amplifier is set to a first voltage based on a first tracking mode; obtaining a first output signal of the power amplifier in a second state where the bias voltage is set to a second voltage less than the first voltage; determining a predistortion associated with the power amplifier based at least in part on the obtained first output signal; applying the predistortion to the first input signal; and amplifying a version of the predistorted first input signal with the power amplifier in a third state where the bias voltage is set to a third voltage based on a second tracking mode, wherein the third voltage is less than the first voltage.

Abstract: An antenna tuning circuit achieves robust performance in a closed loop antenna tuning system due to the addition of protection circuits. In one instance, a protection circuit to detect an overload condition based on a threshold value may be included in the antenna tuning circuit. The antenna tuning circuit also includes a protection state register coupled to the protection circuit to store one or more safe states of operation to which the circuit is restored in response to detecting the overload condition. The antenna tuning circuit also includes a bus interface coupled to the protection state register to transmit an indication of a state of operation of the circuit to an external tuning control device coupled to the circuit and to receive pre-defined protection actions from the external tuning control device in response to the indication of the state of operation.

Abstract: A device includes a silicon-on-insulator (SOI) substrate comprising a bulk silicon (Si) substrate, a buried oxide layer over the bulk Si substrate and a silicon device layer over the buried oxide layer, a first substrate tap and a second substrate tap located in the buried oxide layer and the silicon device layer, the first and second substrate taps in contact with the bulk Si substrate, and an initial depletion region located in the bulk Si substrate below the buried oxide layer and associated with at least one of the first substrate tap and the second substrate tap, the first substrate tap and the second substrate tap configured to increase the initial depletion region based on an applied bias voltage.