Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract: The total film thickness T1N of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (T2N) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the target substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness T2 of the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio RORR of the measurement target substrate is calculated by the following formula (1) from the values of total film thicknesses T1N, T2N and T2. The nitrogen concentration of the silicon oxynitride film of the target substrate is determined from the calculated re-oxidization rate reduction ratio RORR. RORR (%)={(T2?T2N)/(T2?T1N)}×100 (1).

Abstract: The total film thickness T1N of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (T2N) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the target substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness T2 of the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio RORR of the measurement target substrate is calculated by the following formula (1) from the values of total film thicknesses T1N, T2N and T2. The nitrogen concentration of the silicon oxynitride film of the target substrate is determined from the calculated re-oxidization rate reduction ratio RORR. RORR (%)={(T2?T2N)/(T2?T1N)}×100 (1).

Abstract: In a treatment apparatus, a collimator is insulated electrically from the other equipment to be rendered electrically floating, and also the potential of the collimator is variably controllable by a variable DC power source. Therefore, the thickness in plane of the layer to be produced can be uniformalized by controlling the voltage applied to the collimator, without changing both layout and figure of the hardware, e.g., permanent magnet, without process, and further without both beginning and end of a target.

Abstract: The sputtering system of the present invention includes a spare collimator storage chamber for accommodating one or more spare collimators and a processing chamber, which are provided in one-piece or in communication with each other through a gate valve. A used collimator in the processing chamber is quickly and readily replaced with a new collimator stored in the spare collimator storage chamber by a collimator exchanging device without exposing the interior of the processing chamber to atmospheric air.

Abstract: A processing apparatus wherein a collimator which restricts sputtering directions of sputtered particles from a target comprises a plurality of slats arranged substantially parallel with each other. The respective slats constitute a louver mechanism in which rotatable rods are rotated to replace the side thereof facing the target and the side thereof facing the object-to-be-processed with each other. Because of the louver mechanism, the portion of the interior of a processing vessel belonging to the target and the portion thereof belonging to the object-to-be processed can be closed off from each other, and a side of the collimator facing the target and a side thereof facing the object-to-be-processed can be replaced with each other. As a result, the collimator has also a shutter function, and can suppress generation of particles.