Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4?-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Abstract: An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.

Abstract: An object is to provide a photoelectric conversion element with high conversion efficiency. In a photoelectric conversion element with a fine periodic structure on a light-receiving surface side, focus is given to the traveling direction of light that is reflected off another surface. The photoelectric conversion element may be given a structure in which a textured structure that reflects light to the other surface is provided, and light that travels from the light-receiving surface side to the other surface side is reflected so that a component that travels along the photoelectric conversion layer increases. By the distance traveled by the reflected light inside the photoelectric conversion layer increasing, the light that enters the photoelectric conversion element is more easily absorbed by the photoelectric conversion layer and less easily released from the light-receiving surface side, and a photoelectric conversion element with high conversion efficiency can be provided.

Abstract: A polarizer in which parallel transmittance TP is increased and crossed transmittance TC is provided. Instead of arranging a plurality of all metal wires on one plane, a plurality of metal wires is separately formed on at least two different parallel planes, and adjacent meal wires among the plurality of metal wires are staggered in the polarizer. The heights of a first group of metal wires formed on a first plane and a second group of metal wires formed on a second plane, from a surface of the light-transmitting substrate are different. Further, a metal wire of the second group is provided to be more distant from the light-transmitting substrate than the first group of metal wires by distance D, and the distance D is smaller than the thickness of the first group of metal wires.

Abstract: An anti-reflection film that can provide high visibility and has an anti-reflection function by which reflection of incident light from external can be further reduced, and a display device having such an anti-reflection film. A plurality of contiguous pyramidal projections is arranged in a geometric pattern, so that reflection of incident light is prevented. In addition, a protective layer formed of a material having a lower refractive index than the pyramidal projections is provided so as to fill a space between the plurality of pyramidal projections. The plurality of pyramidal projections has a hexagonal shape and can be densely arranged with no space therebetween. Further, since six sides of each pyramidal projection are provided at a different angle from the base, light can be effectively scattered in many directions.

Abstract: An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon, substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.

Abstract: A photoelectric conversion device in which photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance oh a back electrode side is provided between the back electrode and the crystalline silicon substrate. The light-transmitting conductive film includes an organic compound arid an inorganic compound. The organic compound includes a material having an excellent hole-transport property. The inorganic compound includes a transition metal oxide having ah electron-accepting property.

Abstract: A photoelectric conversion device in which photoelectric conversion in a light-absorption layer is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and one of semiconductor layers for generation of an internal electric field. The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes a material having an excellent hole-transport property. The inorganic compound includes a transition metal oxide having an electron-accepting property.

Abstract: An object is to provide a photoelectric conversion device in which the amount of light loss due to light absorption in a window layer is small and light efficiency is high. A photoelectric conversion device, having a p-i-n junction, in which a light-transmitting semiconductor with p-type conductivity, a first silicon semiconductor layer with i-type conductivity, and a second silicon semiconductor layer with n-type conductivity are stacked between a pair of electrodes, is formed. The light-transmitting semiconductor layer is formed using an organic compound and an inorganic compound. A high hole-transport material is used for the organic compound, and a transition metal oxide having an electron-accepting property is used for the inorganic compound.

Abstract: An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of external light which is incident on the antireflective film can be further reduced and a high-visibility display device having such an antireflective film. The tops of the plurality of pyramidal projections are evenly spaced and each side of the base of a pyramidal projection is in contact with one side of the base of an adjacent pyramidal projection. That is, one pyramidal projection is surrounded by other pyramidal projections, and the base of the pyramidal projection and the base of the adjacent pyramidal projection have a side in common.

Abstract: It is an object of the present invention to provide a PDP and an FED with excellent visibility and a high level of reliability that each have an antireflective function by which reflection of external light can be reduced. A plurality of adjacent pyramidal-shaped projections and an antireflective layer equipped with a covering film that covers the projections are provided. The reflection of light is prevented by the index of refraction of incident light from external being changed by a pyramid, which is a physical shape, projecting out toward an external side (atmosphere side) of a substrate that is to be used as a display screen as well as by the covering film used to cover the projections being formed of a material that has a higher index of refraction than the index of refraction of the pyramidal projection.

Abstract: An object is to provide a photoelectric conversion element with high conversion efficiency. In a photoelectric conversion element with a fine periodic structure on a light-receiving surface side, focus is given to the traveling direction of light that is reflected off another surface. The photoelectric conversion element may be given a structure in which a textured structure that reflects light to the other surface is provided, and light that travels from the light-receiving surface side to the other surface side is reflected so that a component that travels along the photoelectric conversion layer increases. By the distance traveled by the reflected light inside the photoelectric conversion layer increasing, the light that enters the photoelectric conversion element is more easily absorbed by the photoelectric conversion layer and less easily released from the light-receiving surface side, and a photoelectric conversion element with high conversion efficiency can be provided.

Abstract: It is an object to provide a plasma display and a field emission display that each have high visibility and an anti-reflection function that can further reduce reflection of incident light from external. Reflection of light can be prevented by having an anti-reflection layer that geometrically includes a plurality of adjacent pyramidal projections. In addition, a plurality of hexagonal pyramidal projections, each of which is provided with a protective layer formed of a material having a lower refractive index than a refractive index of the pyramidal projection so as to fill a space among the plurality of pyramidal projections, can be provided to be packed together without any spaces. Further, six sides of a pyramidal projection face different directions with respect to a base. Therefore, light can be diffused in many directions efficiently.