Abstract: A resist composition containing an organic resin component having a constitutional unit represented by General Formula (a0-1) and an acid generator component containing a compound represented by General Formula (b1-1), Ra00 represents an acid dissociable group represented by General Formula (a0-r1-1); Ra01 and Ra02 represent a hydrocarbon group; one of Ra031, Ra032, and Ra033 represents a hydrocarbon group having an ether bond; Rb01 represents a polycyclic hydrocarbon group having a hydroxy group; Yb01 represents a divalent linking group containing an oxygen atom; Vb01 represents a fluorinated alkylene group or the like; Rb02 represents a fluorine atom; and Mm+ represents an m-valent organic cation

Abstract: A resist composition which contains a polymer compound having a constitutional unit (a01) represented by General Formula (a01-1) and a constitutional unit (a02) represented by General Formula (a02-1), in which a proportion of the constitutional unit (a01) is more than 50% by more and 70% by mole or less, in General Formula (a01-1), Xa01 represents a group that forms a monocyclic alicyclic hydrocarbon group together with Ya01, and Ra01 is a group represented by General Formula (a0-r-1), in Formula (a02-1), Ra02 represents a group represented by any one of General Formulae (a5-r-1) to (a5-r-4)

Abstract: A resist composition which contains a polymer compound having a constitutional unit (a01) represented by General Formula (a01-1), which contains a specific acid dissociable group represented by General Formula (a01-r-1) and a constitutional unit (a02) represented by General Formula (a02-1), which contains a specific cyanolactone structure, a proportion of the constitutional unit (a01) is more than 50% by mole and 70% by mole or less

Abstract: A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to action of an acid, and an acid generator component which generates an acid upon light exposure, in which the base material component contains a polymer compound which has a constitutional unit containing an acid-dissociable group represented by Formula (a01-r-1), and the acid generator component contains a compound represented by Formula (b1) but does not contain an onium salt having a halogen atom in an anion moiety.

Abstract: A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Abstract: A negative tone resist composition for solvent developing including: a base component (A) which exhibits decreased solubility in an organic solvent under the action of acid; a photodecomposable quencher (D0) which generates acid having a pKa of 2.0 or more; and a fluorine additive (F) containing a fluorine-containing polymeric compound (f) which has a structural unit (f0-1) represented by general formula (f0-1) shown below or a structural unit (f0-2) represented by general formula (f0-2) shown below. In the formulae, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; and Rf1 represents an aliphatic hydrocarbon group containing a fluorine atom.

Abstract: A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.

Abstract: A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).

Abstract: A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Abstract: A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Abstract: There are provided a method of forming a resist pattern includes: a step (1) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (2) in which the resist film 2 is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2b of the resist film 2 has been dissolved and removed, and the resist composition used in the step (1).

Abstract: A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.

Abstract: A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the ?-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.

Abstract: A resist composition including a polymeric compound containing a structural unit derived from a compound represented by general formula (a0-m), and a method of forming a resist pattern using the resist composition. R1 represents a polymerizable group; Y1 represents a hydrocarbon group of 1 to 30 carbon atoms; L1 represents a single bond or a carbonyl group; Y2 represents a divalent linking group, and R2 represents a hydrogen atom or a hydrocarbon group, provided that Y2 and R2 may be mutually bonded to form a ring with the nitrogen atom having Y2 and R2 bonded thereto; R3 represents a hydrogen atom or a hydrocarbon group; Y3 represents a group which forms an aromatic ring together with the two carbon atoms having Y3 bonded thereto, provided that the aromatic ring may have a nitro group or a substituent other than the nitro group bonded to the aromatic ring.

Abstract: A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.

Abstract: A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1): wherein R1 represents a group which forms an aromatic ring together with the two carbon atoms bonded to the R1 group; R2 represents a hydrogen atom or a hydrocarbon group; and R3 represents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.

Abstract: A negative tone resist composition for solvent developing including: a base component (A) which exhibits decreased solubility in an organic solvent under the action of acid; a photodecomposable quencher (D0) which generates acid having a pKa of 2.0 or more; and a fluorine additive (F) containing a fluorine-containing polymeric compound (f) which has a structural unit (f0-1) represented by general formula (f0-1) shown below or a structural unit (f0-2) represented by general formula (f0-2) shown below. In the formulae, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; and Rf1 represents an aliphatic hydrocarbon group containing a fluorine atom.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R1 represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X1 represents divalent linking group; X2 represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q1 and Q2 represents F or fluorinated alkyl group; and W+ represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H2N+(X2)—X1—Y—O-A-C(Q1)(Q2)—SO3? generated by decomposition upon exposure].

Abstract: There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.

Abstract: A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.