Abstract: A non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.

Abstract: Disclosed is a memory device which includes a memory cell array including memory cells, data latches connected with a sensing node and storing data in a first memory cell of the memory cells, a sensing latch connected with the sensing node, a temporary storage node, a switch connected between the sensing latch and the temporary storage node and configured to operate in response to a temporary storage node setup signal, a first precharge circuit configured to selectively precharge a first bit line corresponding to the first memory cell depending on a level of the temporary storage node, and a control logic circuit configured to control a dump operation between the data latches, the sensing latch, and the temporary storage node. The control logic circuit performs the dump operation from the data latches to the sensing latch while the first precharge circuit selectively precharges the first bit line.

Abstract: An independent steering control system includes independent steering systems steer wheels and a controller configured for determining a level of fault of each of the independent steering systems. When at least one independent steering system among the independent steering systems is determined to be completely unsteerable, the controller is configured to perform fault tolerant steering by changing steering angles of remaining independent steering systems among the independent steering systems determined to be normal.

Abstract: Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing, by the storage controller, the non-volatile memory device with a first request indicating a wordline selection operation of a target memory block, obtaining, by the non-volatile memory device, distribution information of a plurality of wordlines of the target memory block based on the first request, determining, by the non-volatile memory device, a deterioration wordline among the plurality of wordlines based on the distribution information, and providing, by the non-volatile memory device, the storage controller with wordline information indicating the deterioration wordline.

Abstract: A nonvolatile memory device includes a memory cell array having cell strings that each includes memory cells stacked on a substrate in a direction perpendicular to the substrate. A row decoder is connected with the memory cells through word lines. The row decoder applies a setting voltage to at least one word line of the word lines and floats the at least one word line during a floating time. A page buffer circuit is connected with the cell strings through bit lines. The page buffer senses voltage changes of the bit lines after the at least one word line is floated during the floating time and outputs a page buffer signal as a sensing result. A counter counts a number of off-cells in response to the page buffer signal. A detecting circuit outputs a detection signal associated with a defect cell based on the number of off-cells.

Abstract: The present invention relates to a binder for an anode for a secondary battery, an anode including the binder, and a secondary battery including the anode. More particularly, the present invention relates to a binder for an anode for a secondary battery that has excellent heat resistance and mechanical properties and an improved binding force because a copolymer is used for the binder, and an anode for a secondary battery. In addition, expansion and shrinkage of the anode may be efficiently suppressed, such that charge and discharge life characteristics and performance of the secondary battery may be improved.

Abstract: An aerosol generating device includes a housing, a cartridge insertable into the housing and configured to store at least one liquid, an actuator provided on one side of the cartridge in the housing and configured to push the liquid out of the cartridge, and an article insertion portion provided on the other side of the cartridge and configured such that the aerosol generating article is insertable thereinto.

Abstract: An anhydrous fiber-dyeing apparatus using vacuum transfer, includes: a hollow drum in which a plurality of fine holes are formed to penetrate therethrough, and a fiber to be dyed are wound around an outer surface thereof; a transfer film covering the outer surface of the fiber wound around the drum and having an inner side surface coated with a dye; heating means heating the fiber wound around the drum; and a vacuum means suctioning air through an inner space of the drum to form a vacuum pressure through the fine holes of the drum.

Abstract: Semiconductor memory devices including capacitors and methods for manufacturing thereof. The semiconductor memory device may include a substrate, an element isolation pattern defining an active area in the substrate, a first conductive pattern on the substrate and the element isolation pattern, and extending in a first direction, wherein the first conductive pattern is connected to a first portion of the active area, a capacitor structure on the substrate and the element isolation pattern and connected to a second portion of the active area, a gate trench defined in the substrate and the element isolation pattern and extending in a second direction, wherein a first trench width of a portion of the gate trench in the active area is greater than a second trench width of a portion of the gate trench in the element isolation pattern.

Abstract: Disclosed are an RF bio-sensor and a method for manufacturing the same, in which DNA may be detected in real time, which may greatly improve detection efficiency, and a relatively simple manufacturing method and detection method are used, and signal media materials can be reused, thus making it excellent in terms of economic efficiency, and the bio-sensor does not rely on enzymes or chemical reactions, but uses only high-frequency electrical signal analysis, thus not requiring labels and thus significantly reducing contamination problems.

Abstract: Disclosed is a memory device which includes a memory cell array including memory cells, data latches connected with a sensing node and storing data in a first memory cell of the memory cells, a sensing latch connected with the sensing node, a temporary storage node, a switch connected between the sensing latch and the temporary storage node and configured to operate in response to a temporary storage node setup signal, a first precharge circuit configured to selectively precharge a first bit line corresponding to the first memory cell depending on a level of the temporary storage node, and a control logic circuit configured to control a dump operation between the data latches, the sensing latch, and the temporary storage node. The control logic circuit performs the dump operation from the data latches to the sensing latch while the first precharge circuit selectively precharges the first bit line.

Abstract: A wafer transfer apparatus includes a plate, a first belt unit on a first surface of the plate and including a first linear motion (LM) guide movable up and down, a second belt unit on the first surface of the plate and including a second LM guide movable up and down, a robot between the first belt unit and the second belt unit connected to the first LM guide and the second LM guide, and configured to transfer a wafer in a vertical direction, and a buffer unit between the first belt unit and the second belt unit in a first direction and disposed between the plate and the robot in a second direction perpendicular to the first direction, wherein the buffer unit includes a plurality of centrifugal fans configured to discharge fluid from an inner space of the buffer unit to an outside of the buffer unit.

Abstract: An aerosol generating device includes a housing comprising an article insertion portion for receiving an aerosol generating article, a cartridge insertable into the housing and comprising a flexible portion, and an actuator provided in the housing and configured to change a volume of the cartridge by deformation of the flexible portion.

Abstract: A three-dimensional out sole having a pattern having improved quality and durability has a dye permeated into the surface of the outsole. A depth to which the dye penetrating the micropores is 0.08 mm to 0.12 mm. The dye is permeated into the microspores through vacuum suction. The dye is digitally printed on a thermoplastic sheet. The thermoplastic sheet on which the dye is printed is heated to be softened with flexibility. The softened sheet having flexibility is closely attached to a surface of the shoe outsole having the three-dimensional shape through vacuum adsorption and then is permeated therein.

Abstract: A memory system includes: a memory device including a memory cell array and a control circuit; and a temperature sensor configured to measure a temperature of the memory device to generate a temperature value, wherein the control circuit is configured to: set a compensation sensing parameter based on the temperature value, determine a sensing parameter by applying the compensation sensing parameter to a basic sensing parameter corresponding to a read mode among a plurality of read modes having different read speeds, and read data from the memory cell array based on the sensing parameter.

Abstract: A non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.

Abstract: A storage device including, a plurality of non-volatile memories configured to include a memory cell region including at least one first metal pad; and a peripheral circuit region including at least one second metal pad and vertically connected to the memory cell region by the at least one first metal pad and the at least one second metal pad, and a controller connected to the plurality of non-volatile memories through a plurality of channels and configured to control the plurality of non-volatile memories, wherein the controller selects one of a first read operation mode and a second read operation mode and transfers a read command corresponding to the selected read operation mode to the plurality of non-volatile memories, wherein one sensing operation is performed to identify one program state among program sates in the first read operation mode, and wherein at least two sensing operations are performed to identify the one program state among the program states in the second read operation mode.

Abstract: Disclosed is a memory device which includes a memory cell array including memory cells, data latches connected with a sensing node and storing data in a first memory cell of the memory cells, a sensing latch connected with the sensing node, a temporary storage node, a switch connected between the sensing latch and the temporary storage node and configured to operate in response to a temporary storage node setup signal, a first precharge circuit configured to selectively precharge a first bit line corresponding to the first memory cell depending on a level of the temporary storage node, and a control logic circuit configured to control a dump operation between the data latches, the sensing latch, and the temporary storage node. The control logic circuit performs the dump operation from the data latches to the sensing latch while the first precharge circuit selectively precharges the first bit line.

Abstract: A non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.