Patents by Inventor Jishi CUI

Jishi CUI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical waveguide detector and optical module
    Patent number: 10446707
    Abstract: An optical waveguide detector is provided, which includes: a silicon waveguide layer and a germanium waveguide layer. The germanium waveguide layer includes a first heavily germanium-doped area and a germanium-undoped area. A first surface of the germanium waveguide layer includes a surface of the first heavily germanium-doped area, and the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction. A width of the first heavily germanium-doped area is less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm. According to embodiments, a bandwidth of the optical waveguide detector can be effectively increased.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: October 15, 2019
    Assignees: Huawei Technologies Co., Ltd., Peking University
    Inventors: Yonghao Fei, Jishi Cui, Yisheng Zhu
  • OPTICAL WAVEGUIDE DETECTOR AND OPTICAL MODULE
    Publication number: 20180294365
    Abstract: An optical waveguide detector is provided, which includes: a silicon waveguide layer and a germanium waveguide layer. The germanium waveguide layer includes a first heavily germanium-doped area and a germanium-undoped area. A first surface of the germanium waveguide layer includes a surface of the first heavily germanium-doped area, and the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction. A width of the first heavily germanium-doped area is less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm. According to embodiments, a bandwidth of the optical waveguide detector can be effectively increased.
    Type: Application
    Filed: June 6, 2018
    Publication date: October 11, 2018
    Inventors: Yonghao FEI, Jishi CUI, Yisheng ZHU