Abstract: The display device may include a substrate having a plurality of assembly areas and non-assembly areas, a first partition arranged on a plurality of assembly areas and having an assembly hole, a second partition disposed on the non-assembly areas and a semiconductor light emitting device in the assembly hole, wherein a thickness of the second partition is greater than the thickness of the first partition.

Abstract: The present invention provides an assembly substrate used in a method for manufacturing a display device which mounts semiconductor light emitting devices on a predetermined position of an assembly substrate by using an electric field and a magnetic field.

Abstract: A display device, according to the present invention, comprises a red semiconductor light-emitting element, a green semiconductor light-emitting element and a blue semiconductor light-emitting element, and comprises: a substrate on which the red, green and blue semiconductor light-emitting elements are arranged; and receiving holes which are formed on the substrate and in which the red, green and blue semiconductor light-emitting elements are assembled, wherein the red, green and blue semiconductor light-emitting elements each comprise a tip on a side surface thereof, such that at least any one among the angle formed by the tip and the thickness of one side with respect to the tip is formed so as to be different.

Abstract: A display device according to the present invention comprises: a wiring board including a plurality of pixel areas; and semiconductor light-emitting devices disposed in the pixel areas, wherein the pixel areas include semiconductor light-emitting devices having different shapes and emitting different colors, and wherein the wiring board has two or more pixel areas having different arrangements of the semiconductor light-emitting devices. The present invention may be used as an align key when manufacturing a display device by varying the arrangement of semiconductor light-emitting devices in some pixel areas.

Abstract: A display device manufacturing substrate according to the present disclosure comprises: a base part; assembly electrodes which extend in one direction and which are arranged on the base part; a dielectric layer formed on the base part to cover the assembly electrodes; a partitioning part formed on the dielectric layer; and cells which are formed in a plurality of rows and columns by means of the partitioning part, and on which semiconductor light-emitting elements are loaded, wherein the assembly electrodes extend in either the row direction or the column direction to overlap cells in the extending direction, and the assembly electrodes comprise a first assembly electrode overlapping cells that form one row or column, and a second assembly electrode simultaneously overlapping cells that form different rows or columns which are adjacent.

Abstract: The present invention may be applied to display device-related technical fields and relates to a display device using a semiconductor light-emitting element, such as a micro light-emitting diode (LED), and a manufacturing method therefor. The present invention, according to one embodiment, may comprise: a substrate; a stepped film positioned on at least some pixel regions, among a plurality of individual pixel regions positioned on the substrate; an assembly electrode positioned on the substrate or the stepped film; an insulation layer positioned on the assembly electrode; a partition wall positioned on the insulation layer and defining an assembly groove having mounted therein a semiconductor light-emitting element forming the individual pixel; the semiconductor light-emitting element mounted in an assembly surface of the assembly groove; and a lighting electrode electrically connected to the semiconductor light-emitting element.

Abstract: Discussed is a manufacturing method of a display device. The manufacturing method includes forming a semiconductor light emitting element comprising an assembly blocking layer formed on one surface of the semiconductor light emitting element; preparing an assembly substrate comprising an assembly recess and configured such that the semiconductor light emitting element is assembled in the assembly recess; putting the semiconductor light emitting element into a chamber filled with a fluid; locating the assembly substrate on an upper surface of the chamber, and assembling the semiconductor light emitting element in the assembly recess of the assembly substrate using a magnetic field and an electric field; and transferring the semiconductor light emitting element assembled in the assembly recess of the assembly substrate to a wiring substrate.

Abstract: The present invention provides an assembly substrate used in a method for manufacturing a display device which mounts semiconductor light emitting devices on a predetermined position of an assembly substrate by using an electric field and a magnetic field.

Abstract: Provided in the present specification are a substrate structure having an exclusive design for allowing assembly on a substrate, at the same time, of a plurality of semiconductor light emitting devices having various colors, and a new type of semiconductor light emitting device, such that the semiconductor light emitting devices can be quickly and accurately assembled on the substrate with a concern about color mixing. Here, at least one of the plurality of semiconductor light emitting devices, according to one embodiment of the present invention, comprises a bump part located in the lateral direction of a surface to be assembled. An assembly groove in which the semiconductor light emitting device including the bump part is assembled is provided with a protrusion part facing toward the inside of the assembly groove.

Abstract: Provided in the present specification is a novel structured semiconductor light-emitting element capable of preventing an electrode forming failure due to an arrangement error occurring during assembly or transfer of semiconductor light-emitting elements on a substrate, when a display device is implemented using the semiconductor light-emitting elements, wherein at least one of a plurality of semiconductor light-emitting elements according to one embodiment of the present disclosure comprises: a first conductive type semiconductor layer; a second conductive type semiconductor layer located on the first conductive type semiconductor layer; an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second conductive type electrode located on the second conductive type semiconductor layer; and a first conductive type electrode located on at least a one-side stepped portion of the first conductive type semiconductor layer exposed by etching

Abstract: A solar cell includes a conductive area including first and second conductive areas on one surface of a semiconductor substrate, a passivation film having opening and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, the electrode including an adhesive layer on the semiconductor substrate or the conductive area, an electrode layer on the adhesive layer and including a metal, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer, the electrode layer having a thickness greater than a thickness of each of the adhesive layer and the barrier layer, a width of the electrode layer being larger than a width of the opening, and the barrier layer having a higher melting point than a melting point of the electrode layer.

Abstract: A solar cell includes a conductive area including first and second conductive areas on one surface of a semiconductor substrate, a passivation film having opening and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, the electrode including an adhesive layer on the semiconductor substrate or the conductive area, an electrode layer on the adhesive layer and including a metal, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer, the electrode layer having a thickness greater than a thickness of each of the adhesive layer and the barrier layer, a width of the electrode layer being larger than a width of the opening, and the barrier layer having a higher melting point than a melting point of the electrode layer.

Abstract: Disclosed is a solar cell including a semiconductor substrate, a conductive area including first and second conductive areas disposed on one surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The electrode includes an adhesive layer disposed on the semiconductor substrate or the conductive area, an electrode layer disposed on the adhesive layer and including a metal as a main component, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer as a main component. The electrode layer has a thickness greater than a thickness of each of the adhesive layer and the barrier layer, and the barrier layer has a higher melting point than a melting point of the electrode layer.

Abstract: Disclosed is a solar cell including a plurality of first electrodes electrically connected to a plurality of first conductive regions; and a plurality of second electrodes electrically connected to a plurality of second conductive regions. The plurality of first conductive regions and the plurality of second conductive regions are spaced apart from an edge of a semiconductor substrate by a first interval, the plurality of first conductive regions and the plurality of second conductive regions are spaced apart from each other in a second direction crossing a first direction by a second interval, and the second interval is the same as or less than the first interval.

Abstract: Disclosed is a solar cell including a semiconductor substrate, a conductive area including first and second conductive areas disposed on one surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The electrode includes an adhesive layer disposed on the semiconductor substrate or the conductive area, an electrode layer disposed on the adhesive layer and including a metal as a main component, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer as a main component. The electrode layer has a thickness greater than a thickness of each of the adhesive layer and the barrier layer, and the barrier layer has a higher melting point than a melting point of the electrode layer.