Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

Abstract: An edge ring is disposed to surround a target substrate. The edge ring includes a first upper surface made of silicon carbide, tungsten carbide, magnesium oxide, or yttria, and a second upper surface made of silicon. The second upper surface is formed at a position lower than the first upper surface to face a bottom surface of a peripheral portion of the target substrate.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: A plasma processing apparatus includes a chamber, a mounting table 2 and a focus ring 8. The chamber is configured to process a semiconductor wafer W with plasma. The mounting table 2 is provided within the chamber, and includes a holding surface 9a on which the semiconductor wafer W is mounted. The focus ring 8 is provided to surround the semiconductor wafer W mounted on the holding surface 9a, and includes a first flat portion 8a, a second flat portion 8b and a third flat portion 8c which are formed in sequence from an inner circumferential side of the focus ring 8 toward an outer circumferential side thereof. Here, the first flat portion 8a is lower than the holding surface 9a, the second flat portion 8b is lower than the first flat portion 8a, and the third flat portion 8c is higher than the first flat portion 8a.

Abstract: There is provision of a substrate processing apparatus including a processing vessel, a radio frequency power supply configured to supply radio frequency (RF) current, and a member connected to the processing vessel electrically. The member is configured such that a surface area per unit volume of a first region of the member corresponding to a particular structure of the processing vessel differs from a surface area per unit volume of a second region of the member other than the first region, in order to adjust impedance of the member.

Abstract: A placing table includes an edge ring disposed to surround a substrate; an electrostatic chuck having a first placing surface on which the substrate is placed and a second placing surface on which the edge ring is placed; and an elastic member placed at a position lower than the first placing surface within a gap between an inner circumferential surface of the edge ring and a side surface of the electrostatic chuck between the first placing surface and the second placing surface.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: A plasma processing apparatus 1 includes a chamber 10, a mounting table 16, a focus ring 24a, a first electrode plate 36 and a second electrode plate 35. The focus ring 24a is provided around the mounting table 16 to surround a mounting surface of the mounting table 16. The first electrode plate 36 is provided above the mounting table 16. The second electrode plate 35 is provided around the first electrode plate 36 to surround the first electrode plate 36 and is insulated from the first electrode plate 36. The plasma processing apparatus 1, in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode plate 35 depending on an elapsed time of the first process.

Abstract: A plasma processing apparatus 1 includes a chamber 10, a mounting table 16, a focus ring 24a, a first electrode plate 36 and a second electrode plate 35. The focus ring 24a is provided around the mounting table 16 to surround a mounting surface of the mounting table 16. The first electrode plate 36 is provided above the mounting table 16. The second electrode plate 35 is provided around the first electrode plate 36 to surround the first electrode plate 36 and is insulated from the first electrode plate 36. The plasma processing apparatus 1, in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode plate 35 depending on an elapsed time of the first process.

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

Abstract: A plasma processing apparatus includes a chamber, a mounting table 2 and a focus ring 8. The chamber is configured to process a semiconductor wafer W with plasma. The mounting table 2 is provided within the chamber, and includes a holding surface 9a on which the semiconductor wafer W is mounted. The focus ring 8 is provided to surround the semiconductor wafer W mounted on the holding surface 9a, and includes a first flat portion 8a, a second flat portion 8b and a third flat portion 8c which are formed in sequence from an inner circumferential side of the focus ring 8 toward an outer circumferential side thereof. Here, the first flat portion 8a is lower than the holding surface 9a, the second flat portion 8b is lower than the first flat portion 8a, and the third flat portion 8c is higher than the first flat portion 8a.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.