Patents by Inventor Ji Soon Ihm

Ji Soon Ihm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9919924
    Abstract: This disclosure relates to porous carbon and a method of preparing the same. The porous carbon of the present invention is derived from a carbide compound having a composition comprising metal and oxide. The porous carbon of the present invention comprises both micropores and mesopores, and has large specific surface area, and thus, may be usefully used in various fields.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: March 20, 2018
    Assignees: Hanwha Chemical Corporation, SNU R&DB Foundation
    Inventors: Shin Hoo Kang, Ji Soon Ihm, Dong Ok Kim
  • Patent number: 9796595
    Abstract: This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and it has a large specific surface area, and thus, may be usefully used in various fields.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: October 24, 2017
    Assignees: Hanwha Chemical Corporation, SNU R&DB Foundation
    Inventors: Shin Hoo Kang, Ji Soon Ihm, Dong Ok Kim, Jin-Hong Kim
  • Patent number: 9428390
    Abstract: This disclosure relates to porous carbon and a method of preparing the same. The porous carbon of the present invention is derived from a carbonitride compound having a composition comprising metal and nitrogen. The porous carbon of the present invention comprises both micropores and mesopores, and has a large specific surface area, and thus, may be usefully used in various fields.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: August 30, 2016
    Assignees: Hanwha Chemical Corporation, SNU R&DB Foundation
    Inventors: Shin Hoo Kang, Ji Soon Ihm, Dong Ok Kim, Moon-Su Seo
  • Publication number: 20150246821
    Abstract: This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and it has a large specific surface area, and thus, may be usefully used in various fields.
    Type: Application
    Filed: July 24, 2013
    Publication date: September 3, 2015
    Inventors: Shin Hoo Kang, Ji Soon Ihm, Dong Ok Kim, Jin-Hong Kim
  • Publication number: 20150210547
    Abstract: This disclosure relates to porous carbon and a method of preparing the same. The porous carbon of the present invention is derived from a carbide compound having a composition comprising metal and oxide. The porous carbon of the present invention comprises both micropores and mesopores, and has large specific surface area, and thus, may be usefully used in various fields.
    Type: Application
    Filed: July 24, 2013
    Publication date: July 30, 2015
    Inventors: Shin Hoo Kang, Ji Soon Ihm, Dong Ok Kim
  • Publication number: 20150191355
    Abstract: This disclosure relates to porous carbon and a method of preparing the same. The porous carbon of the present invention is derived from a carbonitride compound having a composition comprising metal and nitrogen. The porous carbon of the present invention comprises both micropores and mesopores, and has a large specific surface area, and thus, may be usefully used in various fields.
    Type: Application
    Filed: July 24, 2013
    Publication date: July 9, 2015
    Inventors: Shin Hoo Kang, Ji Soon Ihm, Dong Ok Kim, Moon-Su Seo
  • Patent number: 7615917
    Abstract: An electron emission source including a carbon-based material coated with metal carbide in the surface coating layer, of which the metal has a negative Gibbs free energy when forming the metal carbide at 1,500 K or lower, a method of preparing electron emission sources, and an electron emission device including the electron emission source. The electron emission source includes a carbon nanotube coated with metal carbide or a carbon nanotube having a metal carbide layer and a metal coating layer, which are sequentially formed thereon. Thus, the electron emission source has long lifespan without deterioration of electron emitting characteristics. The electron emission source can be used to manufacture electron emission devices with improved reliability.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: November 10, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Young-Chul Choi, Jae-Myung Kim, Chang-Wook Kim, Eun-Mi Lee, Joong-Woo Nam, Sung-Hee Cho, Jong-Hwan Park, Ji-Soon Ihm
  • Publication number: 20080111466
    Abstract: An electron emission material having high electron emission efficiency and long lifespan, and an electron emission device and an electron emission display device having the electron emission material. The electron emission material has a surface to which hydrogen atoms are attached. The electron emission display device includes: a front panel having a phosphor layer; an electron emission device adhered to the front panel with a space therebetween; and a hydrogen emitter in the space defined by the front panel and the electron emission device.
    Type: Application
    Filed: October 22, 2007
    Publication date: May 15, 2008
    Inventors: Young-Mi Cho, Chang-Wook Kim, Ji-Soon Ihm
  • Publication number: 20070024177
    Abstract: An electron emission source including a carbon-based material coated with metal carbide in the surface coating layer, of which the metal has a negative Gibbs free energy when forming the metal carbide at 1,500 K or lower, a method of preparing electron emission sources, and an electron emission device including the electron emission source. The electron emission source includes a carbon nanotube coated with metal carbide or a carbon nanotube having a metal carbide layer and a metal coating layer, which are sequentially formed thereon. Thus, the electron emission source has long lifespan without deterioration of electron emitting characteristics. The electron emission source can be used to manufacture electron emission devices with improved reliability.
    Type: Application
    Filed: July 25, 2006
    Publication date: February 1, 2007
    Inventors: Young-Chul Choi, Jae-Myung Kim, Chang-Wook Kim, Eun-Mi Lee, Joong-Woo Nam, Sung-Hee Cho, Jong-Hwan Park, Ji-Soon Ihm
  • Patent number: 6677624
    Abstract: Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n−m≠3 l) nanotubes, whereby substantially reducing a device size and improving an operation speed as the carbon nanotube has a thermal conductivity much better than silicon.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: January 13, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Ji Soon Ihm
  • Publication number: 20030015727
    Abstract: Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n−m≠3l) nanotubes, whereby substantially reducing a device size and improving an operation speed as the carbon nanotube has a thermal conductivity much better than silicon.
    Type: Application
    Filed: September 17, 2002
    Publication date: January 23, 2003
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventor: Ji Soon Ihm
  • Patent number: 6465813
    Abstract: Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n−m≠3l) nanotubes, whereby substantially reducing a device size and improving an operation speed as the carbon nanotube has a thermal conductivity much better than silicon.
    Type: Grant
    Filed: March 18, 1999
    Date of Patent: October 15, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Ji Soon Ihm
  • Publication number: 20020020841
    Abstract: Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n, m, n−m≠3l) nanotubes, whereby substantially reducing a device size and improving an operation speed as the carbon nanotube has a thermal conductivity much better than silicon.
    Type: Application
    Filed: March 18, 1999
    Publication date: February 21, 2002
    Inventor: JI SOON IHM