Abstract: The present invention provides a load generating unit for testing an actuator, the unit including a first permanent magnet and a second permanent magnet spaced apart from each other; a third permanent magnet or a ferromagnetic body arranged in a row with the first permanent magnet and the second permanent magnet between the first permanent magnet and the second permanent magnet; and a first link passing through central axes of the first permanent magnet and the second permanent magnet to be penetrated to a central axis of the third permanent magnet and be connected to the actuator, wherein the third permanent magnet and the link are displaced in a length direction of the first link by a magnetic force. According to the present invention, the complexity, cost, and inertia of a device may be overcome and a load profile may be easily generated.

Abstract: The present invention provides a load generating unit for testing an actuator, the unit including a first permanent magnet and a second permanent magnet spaced apart from each other; a third permanent magnet or a ferromagnetic body arranged in a row with the first permanent magnet and the second permanent magnet between the first permanent magnet and the second permanent magnet; and a first link passing through central axes of the first permanent magnet and the second permanent magnet to be penetrated to a central axis of the third permanent magnet and be connected to the actuator, wherein the third permanent magnet and the link are displaced in a length direction of the first link by a magnetic force. According to the present invention, the complexity, cost, and inertia of a device may be overcome and a load profile may be easily generated.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: A method for controlling error check and correction (ECC) of a non-volatile memory device includes storing write data in a plurality of storing regions. The write data may be generated by performing ECC encoding. Individual ECC decoding may be performed based on each of a plurality of read data read out from the storing regions. Logic operation data may be provided by performing a logic operation of the read data when the individual ECC decoding fails with respect to all of the read data. Combined ECC decoding may be performed based on the logic operation data.

Abstract: A storage device includes a nonvolatile memory device and a controller configured to send first data, an address, and a first command to the nonvolatile memory device. The controller also sends at least one data to the nonvolatile memory device after sending the first command. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the first command. When receiving the at least one data from the controller, the nonvolatile memory device is configured to continue to perform the program operation based on the first data and the at least one data.

Abstract: A method for controlling error check and correction (ECC) of a non-volatile memory device includes storing write data in a plurality of storing regions. The write data may be generated by performing ECC encoding. Individual ECC decoding may be performed based on each of a plurality of read data read out from the storing regions. Logic operation data may be provided by performing a logic operation of the read data when the individual ECC decoding fails with respect to all of the read data. Combined ECC decoding may be performed based on the logic operation data.

Abstract: A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

Abstract: A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.

Abstract: A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

Abstract: A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.

Abstract: A storage device includes a nonvolatile memory device and a controller configured to send first data, an address, and a first command to the nonvolatile memory device. The controller also sends at least one data to the nonvolatile memory device after sending the first command. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the first command. When receiving the at least one data from the controller, the nonvolatile memory device is configured to continue to perform the program operation based on the first data and the at least one data.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: Disclosed is a variable-diameter wheel including a wheel having a folding pattern in which a unit cell is repeated and configured to be expanded or contracted so that a wheel diameter is varied; a spoke fixedly coupled to both longitudinal ends of the wheel and configured to be expanded or contracted according to a change in a distance between both sides, such that the wheel diameter is varied; and a variable induction shaft rotatably coupled with one of the both spokes to move the spoke in at least one lengthwise direction and configured to vary a distance between one spoke and the other spoke.

Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.

Abstract: A method of programming a nonvolatile memory device is provided which includes applying a program voltage to selected ones of a plurality of memory cells; applying a selected one of a plurality of verification voltages after pre-charging bit lines connected to memory cells to which the program voltage is applied; sensing the memory cells to which the selected verification voltage is applied; selecting memory cells programmed to a target state referring to the sensing result and target state data; and determining whether programming of the selected memory cells is passed or failed.

Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.