Patents by Inventor Ji-Suk Park

Ji-Suk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153792
    Abstract: An apparatus and method for processing a substrate can reduce the concentration of process by-products in a chemical solution.
    Type: Application
    Filed: November 7, 2023
    Publication date: May 9, 2024
    Applicants: SEMES CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Jung KIM, Jin Ah HAN, Hee Hwan KIM, Yong Hoon HONG, Kyoung Suk KIM, Jong Hyeok PARK, Jin Hyung PARK, Dae Hyuk CHUNG, Ji Hoon CHA
  • Patent number: 11963445
    Abstract: Provided are a compound capable of improving the light-emitting efficiency, stability, and lifespan of an element; an organic electronic element using same; and an electronic device thereof.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: April 16, 2024
    Assignee: DUK SAN NEOLUX CO., LTD.
    Inventors: Ji Hyun Park, Se Hoon Lee, Jae Wan Jang, Hyung Dong Lee, Yun Suk Lee
  • Patent number: 11912674
    Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: February 27, 2024
    Assignee: IL DONG PHARMACEUTICAL CO., LTD.
    Inventors: Jae-Hoon Kang, Hong-Sub Lee, Yoon-Suk Lee, Jin-Ah Jeong, Sung-Wook Kwon, Jeong-Guen Kim, Kyung-Sun Kim, Dong-Keun Song, Sun-Young Park, Kyeo-Jin Kim, Ji-Hye Choi, Hey-Min Hwang
  • Publication number: 20230083783
    Abstract: An image sensing device includes a first substrate including a first front surface and a first back surface, a first interlayer insulation layer disposed below the first front surface and including a first interconnect, a second substrate including a second front surface and a second back surface, a second interlayer insulation layer disposed over the second front surface and below the first interlayer insulation layer to be in contact with the first interlayer insulation layer, and including a second interconnect, a first TSV disposed in a through hole formed by penetrating the first substrate and the first interlayer insulation layer and by etching of a portion of the second interlayer insulation layer, and electrically connecting the first interconnect to the second interconnect, and a passivation layer formed to cover the first TSV. An upper end of the first TSV is located at a height lower than the first back surface.
    Type: Application
    Filed: April 21, 2022
    Publication date: March 16, 2023
    Inventors: Yun Hui YANG, Ji Suk PARK, Tae Yang LEE
  • Patent number: 10734425
    Abstract: An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: August 4, 2020
    Assignee: SK hynix Inc.
    Inventors: Do-Hwan Kim, Ji-Suk Park
  • Publication number: 20190148432
    Abstract: An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.
    Type: Application
    Filed: July 12, 2018
    Publication date: May 16, 2019
    Inventors: Do-Hwan KIM, Ji-Suk PARK
  • Patent number: 7659601
    Abstract: A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.
    Type: Grant
    Filed: June 28, 2007
    Date of Patent: February 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Suk Park, Won-Chul Lee
  • Publication number: 20080093704
    Abstract: A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.
    Type: Application
    Filed: June 28, 2007
    Publication date: April 24, 2008
    Inventors: Ji-Suk Park, Won-Chul Lee