Abstract: A semiconductor device includes a landing pad on a substrate; a lower electrode extending in a vertical direction on the landing pad, the lower electrode connected to the landing pad; a capacitor dielectric layer on the lower electrode; a doping layer between the lower electrode and the capacitor dielectric layer, the doping layer being in contact with each of the lower electrode and the capacitor dielectric layer, the doping layer is doped with first to third materials, the first material having a trivalent atom valence electron, the second material having a tetravalent atom valence electron, and the third material having a pentavalent atom valence electron; and an upper electrode on the capacitor dielectric layer.

Abstract: An image sensing device includes a first substrate including a first front surface and a first back surface, a first interlayer insulation layer disposed below the first front surface and including a first interconnect, a second substrate including a second front surface and a second back surface, a second interlayer insulation layer disposed over the second front surface and below the first interlayer insulation layer to be in contact with the first interlayer insulation layer, and including a second interconnect, a first TSV disposed in a through hole formed by penetrating the first substrate and the first interlayer insulation layer and by etching of a portion of the second interlayer insulation layer, and electrically connecting the first interconnect to the second interconnect, and a passivation layer formed to cover the first TSV. An upper end of the first TSV is located at a height lower than the first back surface.

Abstract: An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.

Abstract: An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.

Abstract: A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.

Abstract: A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.