Abstract: A plasma monitoring system includes a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage, a light transmitter on the view window and including optical fibers configured to obtain a first light generated during the plasma process, a detachable reflection mirror between the view window and the optical fibers, a light generator configured to irradiate a second light onto the reflection mirror through the optical fibers and to irradiate a third light onto the view window through the optical fibers, and a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror, and to correct the light spectrum based on the third light reflected from the view window.

Abstract: An example plasma monitoring apparatus includes a monitoring structure fixed to a sidewall of a plasma chamber housing such that the monitoring structure is in contact with a viewport located in the sidewall of the plasma chamber housing, a cylindrical lens provided inside the monitoring structure and located at a front end of the monitoring structure, the cylindrical lens configured to receive a plurality of rays of plasma emission light emitted from a plasma space of interest inside the plasma chamber housing, and a plasma detector provided inside the monitoring structure and located at a rear end of the monitoring structure, the plasma detector configured to detect the plurality of rays of plasma emission light transmitted through the cylindrical lens. The cylindrical lens includes a side surface in a form of a circumferential surface convex or concave in a second horizontal direction.

Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.

Abstract: A substrate processing apparatus according to an embodiment includes: a chamber including a measurement window in a side of the chamber and configured to provide a path for light to propagate; a plasma excitation member configured to apply energy for excitation of plasma in the chamber; a support member inside of the chamber and configured to support a substrate; and a detection module positioned to face the measurement window, and configured to detect light emitted from the plasma excitation member through the window.

Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.

Abstract: A plasma monitoring system includes a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage, a light transmitter on the view window and including optical fibers configured to obtain a first light generated during the plasma process, a detachable reflection mirror between the view window and the optical fibers, a light generator configured to irradiate a second light onto the reflection mirror through the optical fibers and to irradiate a third light onto the view window through the optical fibers, and a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror, and to correct the light spectrum based on the third light reflected from the view window.

Abstract: Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.

Abstract: Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.