Patents by Inventor Jiti Nukeaw

Jiti Nukeaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8372250
    Abstract: A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen/argon is at least 0.02, the flow rate ratio of oxygen/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: February 12, 2013
    Assignees: National Science and Technology Development Agency, King Mongkut's Institute of Technology Ladkrabang
    Inventors: Jiti Nukeaw, Supanit Porntheeraphat, Apichart Sungthong
  • Publication number: 20090026065
    Abstract: A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen/argon is at least 0.02, the flow rate ratio of oxygen/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.
    Type: Application
    Filed: July 23, 2007
    Publication date: January 29, 2009
    Inventors: Jiti Nukeaw, Supanit Porntheeraphat, Apichart Sungthong
  • Publication number: 20090015907
    Abstract: Nanocrystal indium oxynitride (InON) thin films are used as a functional layer for optical high-pass filters or devices. The filters or devices function in ultraviolet to near infrared regions by the sputtering conditions. The thin film is deposited with radio frequency (RF) magnetron sputtering. The 99.999% purity of metal Indium (In) was used as a target in the sputtering process. The two mass flow controllers were use to control the flow rate of ultra high purity nitrogen and oxygen (as the reactive gases) to sputter the target onto the substrates without heating. The InON thin film was deposited on glass or plastic substrates so prepared can provide optical filters without any post-process requirement.
    Type: Application
    Filed: July 12, 2007
    Publication date: January 15, 2009
    Inventors: Jiti Nukeaw, Supanit Porntheeraphat, Apichart Sungthong