Patents by Inventor Jitske Trevor

Jitske Trevor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate monitoring method and apparatus
    Patent number: 6824813
    Abstract: A substrate processing apparatus comprises a chamber 28 capable of processing a substrate 20. A radiation source 58 provides radiation that is at least partially reflected from the substrate in the chamber. A radiation detector 62 is provided to detect the reflected radiation and generate a signal. A controller 100 is adapted to receive the signal and determine a property of the substrate 20 in situ during processing, before an onset of during or after processing of a material on the substrate 20.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: November 30, 2004
    Assignee: Applied Materials Inc
    Inventors: Thorsten B. Lill, Michael N. Grimbergen, Jitske Trevor, Wei-Nan Jiang, Jeffrey Chinn
  • Sidewall polymer forming gas additives for etching processes
    Patent number: 6583065
    Abstract: A process of reducing critical dimension (CD) microloading in dense and isolated regions of etched features of silicon-containing material on a substrate uses a plasma of an etchant gas and an additive gas. In one version, the etchant gas comprises halogen species absent fluorine, and the additive gas comprises fluorine species and carbon species, or hydrogen species and carbon species.
    Type: Grant
    Filed: August 3, 1999
    Date of Patent: June 24, 2003
    Assignee: Applied Materials Inc.
    Inventors: Raney Williams, Jeffrey Chinn, Jitske Trevor, Thorsten B. Lill, Padmapani Nallan, Tamas Varga, Herve Mace
  • Method for etching polysilicon to have a smooth surface
    Patent number: 6402974
    Abstract: In accordance with the present invention, during a polysilicon etch back, a controlled amount of oxygen (O2) is added to the plasma generation feed gases, to reduce pitting of the etched back polysilicon surface. The plasma etchant is generated from a plasma source gas comprising: (i) at least one fluorine-containing gas, and (ii) oxygen. The invention may be practiced in any of a number of apparatus adapted to expose polysilicon to a plasma etchant. One preferred apparatus is a decoupled plasma source (DPS™, Applied Materials, Santa Clara, Calif.) etching system. Another preferred apparatus is a magnetically enhanced plasma (MXP™, Applied Materials, Santa Clara, Calif.) etching system.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: June 11, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Jitske Trevor, Shashank Deshmukh, Jeff Chinn
  • Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
    Patent number: 5786276
    Abstract: A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH.sub.3 F/CF.sub.4 /O.sub.2 recipe and a CH.sub.2 F.sub.2 /CF.sub.4 /O.sub.2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.
    Type: Grant
    Filed: March 31, 1997
    Date of Patent: July 28, 1998
    Assignee: Applied Materials, Inc.
    Inventors: Cynthia B. Brooks, Walter Merry, Ajey M. Joshi, Gladys D. Quinones, Jitske Trevor