Abstract: A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335° C. and less than 1414° C.

Abstract: A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335° C. and less than 1414° C.

Abstract: Disclosed is a chemical vapour deposition injector 100, comprising a gas injector body 104 having a plurality of holes for directing a first gas from a first gas plenum into respective first gas channels of the gas injector body, each first gas channel extending in a first direction and arranged to branch into separate flow paths; a plurality of discrete first conduits, each first conduit being arranged to connect to a respective one of the discrete flow paths for carrying the first gas to a reaction chamber; a second gas channel for directing a second gas from a second gas plenum into the gas injector body, the second gas channel having a longitudinal axis which extends in a second direction transverse to the first direction; and a plurality of discrete second conduits coupled to the second gas channel and arranged to carry the second gas from the second gas channel to the reactor chamber; wherein at least some of the discrete second conduits are arranged between the discrete first conduits.