Abstract: A device for chemical-mechanical polishing. The device can be applied to a chemical polishing table spinning in a fixed direction and a polishing pad above of it. A chemical-mechanical polishing device according to the present invention is at least comprised of a main body of conditioner with a plurality of mounting pads, wherein each mounting pad is mounted with the diamond granules and located on the lower surface of conditioner, distributed on the rim of main body of each mounting pad. It can contact with polishing pads when cleaning the polishing pads and a number of cavities are across the upper and lower surfaces of each main body of conditioner and distributed between each mounting pads as well. When using the conditioners to clean out the polishing pads, the de-ionized water will flow through the cavities to wash off the acid or basic slurry to eliminate the destruction made by the solders around the diamond granules to extend the durability of the conditioner.

Abstract: A method for chemical mechanical polishing (CMP) of a wafer having a top layer to be polished is disclosed. The method comprises the steps of: using a CMP apparatus to polish the top layer using a first slurry having abrasive particles of a first size; and using the CMP apparatus to polish the top layer using a second slurry having abrasive particles of a second size, the second size being smaller than the first size.

Abstract: A method is provided for polishing a composite comprised of silica and silicon nitride wherein a polishing composition is used comprising: an aqueous medium, abrasive particles, a surfactant, an organic polymer viscosity modifier which increases the viscosity of the composition, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A method of reducing agglomerated particles in a slurry for use in a chemical mechanical polishing (CMP) machine, the CMP machine also using deionized water, is disclosed. The method comprises the steps of: monitoring the pH of the slurry that is provided to the CMP machine; monitoring the pH of the deionized water that is provided to the CMP machine; and adjusting the pH of the deionized water to be substantially the same as the pH of the slurry.

Abstract: A method and apparatus for conditioning a slurry used in a chemical mechanical polishing apparatus is disclosed. Megasonic generators are provided along the piping network between a slurry reservoir and the CMP apparatus. A megasonic generator may also be placed adjacent to the slurry reservoir. The megasonic generators discourage the formation of agglomerate particles, which in turn reduces the number of defects caused by the large particles in the slurry.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A composition is provided, which is suitable for polishing SiO.sub.2, silicates, and silicon nitride, comprising an aquesous slurry of submicron SiO.sub.2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.

Abstract: An aqueous slurry is provided which is useful for the chemical-mechanical polishing of substrates containing titanium comprising: water, submicron abrasive particles, an oxidizing agent, and a combination of complexing agents comprising a phthalate compound and a compound which is a di- or tri-carboxylic acid with at least one hydroxyl group in an alpha position relative to one of the carboxyl groups.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: An aqueous slurry is provided for polishing or planarizing a work piece which contains a metal, the solids portion of said slurry being comprised of 1 to 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from the group consisting of aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.

Abstract: The invention is a process for preparing chemically active solid oxide particles useful for polishing, composed primarily of CeO.sub.2, or CeO.sub.2 together with other oxides, comprising: (a) forming an aqueous solution comprised of a water soluble trivalent cerium salt and an oxidizing agent and (b) aging said mixture in the liquid state for a time not less than 4 hours.