Patents by Inventor Jiun-Jie Chao

Jiun-Jie Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9818900
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: November 14, 2017
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Hsin-Yi Chen, Jiun-Jie Chao, Hong-Jhang Syu
  • Publication number: 20140361396
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Application
    Filed: February 19, 2014
    Publication date: December 11, 2014
    Applicant: National Taiwan University
    Inventors: Ching-Fuh Lin, Hsin-Yi Chen, Jiun-Jie Chao, Hong-Jhang Syu
  • Patent number: 8486749
    Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: July 16, 2013
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Jiun-Jie Chao, Shu-Chia Shiu
  • Patent number: 8258396
    Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.
    Type: Grant
    Filed: December 29, 2008
    Date of Patent: September 4, 2012
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Jiun-Jie Chao, Shu-Chia Shiu
  • Publication number: 20120058593
    Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.
    Type: Application
    Filed: November 14, 2011
    Publication date: March 8, 2012
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: CHING-FUH LIN, JIUN-JIE CHAO, SHU-CHIA SHIU
  • Patent number: 8053025
    Abstract: The present invention discloses a mixed-type heterojunction thin-film solar cell structure and a method for fabricating the same. Firstly, a conductive substrate and a template are provided, and the template has a substrate and an inorganic wire array formed on the substrate. Next, a conjugate polymer layer is formed on the conductive substrate. Next, the inorganic wire array is embedded into the conjugate polymer layer. Next, the substrate is separated from the inorganic wire array. Then, an electrode layer is formed over the inorganic wire array and the conjugate polymer layer. The solar cell structure of the present invention has advantages of flexibility, high energy conversion efficiency and low fabrication cost.
    Type: Grant
    Filed: August 14, 2008
    Date of Patent: November 8, 2011
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Chieh-Yu Hsiao, Jiun-Jie Chao
  • Publication number: 20100326508
    Abstract: The present invention discloses a mixed-type heterojunction thin-film solar cell structure and a method for fabricating the same. Firstly, a conductive substrate and a template are provided, and the template has a substrate and an inorganic wire array formed on the substrate. Next, a conjugate polymer layer is formed on the conductive substrate. Next, the inorganic wire array is embedded into the conjugate polymer layer. Next, the substrate is separated from the inorganic wire array. Then, an electrode layer is formed over the inorganic wire array and the conjugate polymer layer. The solar cell structure of the present invention has advantages of flexibility, high energy conversion efficiency and low fabrication cost.
    Type: Application
    Filed: September 8, 2010
    Publication date: December 30, 2010
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: CHING-FUH LIN, CHIEH-YU HSIAO, JIUN-JIE CHAO
  • Publication number: 20100055824
    Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.
    Type: Application
    Filed: December 29, 2008
    Publication date: March 4, 2010
    Inventors: Ching-Fuh Lin, Jiun-Jie Chao, Shu-Chia Shiu
  • Publication number: 20090293946
    Abstract: The present invention discloses a mixed-type heterojunction thin-film solar cell structure and a method for fabricating the same. Firstly, a conductive substrate and a template are provided, and the template has a substrate and an inorganic wire array formed on the substrate. Next, a conjugate polymer layer is formed on the conductive substrate. Next, the inorganic wire array is embedded into the conjugate polymer layer. Next, the substrate is separated from the inorganic wire array. Then, an electrode layer is formed over the inorganic wire array and the conjugate polymer layer. The solar cell structure of the present invention has advantages of flexibility, high energy conversion efficiency and low fabrication cost.
    Type: Application
    Filed: August 14, 2008
    Publication date: December 3, 2009
    Inventors: Ching-Fuh Lin, Chieh-Yu Hsiao, Jiun-Jie Chao