Abstract: A manufacturing method of a semiconductor device includes following steps. First gate structures and second gate structures are formed on a first region and a second region of a semiconductor substrate respectively. A spacing distance between the second gate structures is larger than that between the first gate structures. A first ion implantation is preformed to form a first doped region between the first gate structures. A second ion implantation is performed to form a second doped region between the second gate structures. A tilt angle of the second ion implantation is larger than that of the first ion implantation. An implantation dose of the second ion implantation is lower than that of the first ion implantation. An etching process is performed to at least partially remove the first doped region to form a first recess and at least partially remove the second doped region to form a second recess.

Abstract: A manufacturing method of a semiconductor device includes following steps. First gate structures and second gate structures are formed on a first region and a second region of a semiconductor substrate respectively. A spacing distance between the second gate structures is larger than that between the first gate structures. A first ion implantation is preformed to form a first doped region between the first gate structures. A second ion implantation is performed to form a second doped region between the second gate structures. A tilt angle of the second ion implantation is larger than that of the first ion implantation. An implantation dose of the second ion implantation is lower than that of the first ion implantation. An etching process is performed to at least partially remove the first doped region to form a first recess and at least partially remove the second doped region to form a second recess.

Abstract: The present disclosure provides a method and system for heat dissipation in semiconductor devices. In one example, an integrated circuit semiconductor device includes a semiconductor substrate; one or more metallurgy layers connected to the semiconductor substrate, and each of the one or more metallurgy layers includes: one or more conductive lines; and one or more dummy structures between the one or more conductive lines and at least two of the one or more dummy structures are connected; and one or more dielectric layers between the one or more metallurgy layers.

Abstract: The present disclosure provides a method and system for heat dissipation in semiconductor devices. In one example, an integrated circuit semiconductor device includes a semiconductor substrate; one or more metallurgy layers connected to the semiconductor substrate, and each of the one or more metallurgy layers includes: one or more conductive lines; and one or more dummy structures between the one or more conductive lines and at least two of the one or more dummy structures are connected; and one or more dielectric layers between the one or more metallurgy layers.