Abstract: A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.

Abstract: A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.

Abstract: A new method is provided for monitoring the effect of electron charging during the creation of a semiconductor device. The method of the invention makes use of electron trapping that occurs as a result of FN tunneling in a layer of interlayer oxide of an EEPROM device. The electron trapping is monitored under conditions of processing. After the electron trapping has occurred, the rate of discharge of the trapped electron charge is measured during Wafer Acceptance Testing (WAT).

Abstract: A double substrate spatial light modulator with an enlarged tilt angle is achieved. The device comprises a mirror attached on one end to a hinge wherein the hinge is attached to support posts adjacent to the mirror and attached to an underlying glass substrate, a trench within the glass substrate adjacent to the support posts wherein the mirror tilts upward from the glass substrate and downward into the trench, and an overlying glass substrate. The trench provides an enlarged tilt angle of mirror motion. This improves optical performance of the mirror projector including contrast ratio and gray scale.

Abstract: A deformable mirror device spatial light modulator employs a pair of substrates each having formed therein a deflection electrode. The pair of deflection electrodes is separated by a gap having positioned therein a deformable mirror which is registered with both of the pair of deflection electrodes. Appropriate magnitudes and polarities of voltages are applied to the pair of deflection electrodes and the deformable mirror such as to deflect the deformable mirror with enhanced deflection control.

Abstract: A double substrate spatial light modulator with an enlarged tilt angle is achieved. The device comprises a mirror attached on one end to a hinge wherein the hinge is attached to support posts adjacent to the mirror and attached to an underlying glass substrate, a trench within the glass substrate adjacent to the support posts wherein the mirror tilts upward from the glass substrate and downward into the trench, and an overlying glass substrate. The trench provides an enlarged tilt angle of mirror motion. This improves optical performance of the mirror projector including contrast ratio and gray scale.

Abstract: A method of fabricating ROM products through the use of embedded flash/EEPROM prototypes is disclosed. This is accomplished by first forming a Flash/EEPROM prototype, performing programming simulations on the prototype, developing a ROM code and mask, and then forming a ROM product in the same manufacturing line by skipping certain Flash/EEPROM steps and then implanting the ROM code into the final ROM product. The method improves turn-around-time in the manufacturing line, and reduces cost to the customer. A method of doing business is also disclosed directed to providing ROM products to a customer without much redesign time and effort on the part of the customer.

Abstract: A new method to form ROM devices in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. MOS gates are formed overlying the substrate. Ions are implanted into the substrate to form lightly doped drains for the MOS gates. A masking layer is used to offset the lightly doped drains from selective MOS gates to thereby form constant-OFF MOS gates. Spacers are next formed on the sidewalls of the MOS gates. Finally, ions are implanted into the substrate to form source and drain regions for the MOS gates to thereby complete the ROM devices in the manufacture of said integrated circuit device. The method may be extended to form ROM devices from Flash gates in a FlashROM process.