Abstract: A lateral drain metal oxide semiconductor (LDMOS) device includes a well region having a second conductive type in a substrate, a body region having a first conductive type in the well region, a drift region having the second conductive type in the well region and spaced apart from the body region, a source region having the second conductive type in the body region, a drain region having the second conductive type in the drift region, a gate structure on the well region between the source region and the drain region, a shallow trench isolation (STI) structure in the drift region between the drain region and the source region, and a buried layer having the first conductive type in the well region under the drift region, a center of the buried layer being aligned with a center of the STI structure.

Abstract: A lateral drain metal oxide semiconductor (LDMOS) device includes a well region having a second conductive type in a substrate, a body region having a first conductive type in the well region, a drift region having the second conductive type in the well region and spaced apart from the body region, a source region having the second conductive type in the body region, a drain region having the second conductive type in the drift region, a gate structure on the well region between the source region and the drain region, a shallow trench isolation (STI) structure in the drift region between the drain region and the source region, and a buried layer having the first conductive type in the well region under the drift region, a center of the buried layer being aligned with a center of the STI structure

Abstract: A lateral drain metal oxide semiconductor (LDMOS) device includes a well region having a second conductive type in a substrate, a body region having a first conductive type in the well region, a drift region having the second conductive type in the well region and spaced apart from the body region, a source region having the second conductive type in the body region, a drain region having the second conductive type in the drift region, a gate structure on the well region between the source region and the drain region, a shallow trench isolation (STI) structure in the drift region between the drain region and the source region, and a buried layer having the first conductive type in the well region under the drift region, a center of the buried layer being aligned with a center of the STI structure.

Abstract: A lateral drain metal oxide semiconductor (LDMOS) device includes a well region having a second conductive type in a substrate, a body region having a first conductive type in the well region, a drift region having the second conductive type in the well region and spaced apart from the body region, a source region having the second conductive type in the body region, a drain region having the second conductive type in the drift region, a gate structure on the well region between the source region and the drain region, a shallow trench isolation (STI) structure in the drift region between the drain region and the source region, and a buried layer having the first conductive type in the well region under the drift region, a center of the buried layer being aligned with a center of the STI structure.