Patents by Inventor Jiunn-Hsing Liao

Jiunn-Hsing Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for increasing the removal rate of photoresist layer
    Patent number: 8129101
    Abstract: A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: March 6, 2012
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • METHOD FOR INCREASING THE REMOVAL RATE OF PHOTORESIST LAYER
    Publication number: 20090169767
    Abstract: A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Application
    Filed: March 6, 2009
    Publication date: July 2, 2009
    Applicant: United Microelectronics Corp.
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • Method of fabricating semiconductor devices
    Patent number: 7531434
    Abstract: A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: May 12, 2009
    Assignee: United Microelectronics Corp.
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
  • Method of simultaneously controlling ADI-AEI CD differences of openings having different sizes and etching process utilizing the same method
    Patent number: 7319067
    Abstract: A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (?S1/?S2) and the difference between ?S1 and ?S2 is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.
    Type: Grant
    Filed: November 7, 2005
    Date of Patent: January 15, 2008
    Assignee: United Microelectronics Corp.
    Inventors: Pei-Yu Chou, Jiunn-Hsing Liao
  • METHOD OF SIMULTANEOUSLY CONTROLLING ADI-AEI CD DIFFERENCES OF OPENINGS HAVING DIFFERENT SIZES AND ETCHING PROCESS UTILIZING THE SAME METHOD
    Publication number: 20070105322
    Abstract: A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (?S1/?S2) and the difference between ?S1 and ?S2 is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.
    Type: Application
    Filed: November 7, 2005
    Publication date: May 10, 2007
    Inventors: Pei-Yu Chou, Jiunn-Hsing Liao
  • METHODS OF REMOVING PHOTORESIST AND FABRICATING SEMICONDUCTOR DEVICES
    Publication number: 20070093031
    Abstract: A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
    Type: Application
    Filed: October 20, 2005
    Publication date: April 26, 2007
    Inventors: Wen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao