Patents by Inventor Jiunn-Wen Weng

Jiunn-Wen Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxygen plasma etch process post contact layer etch back
    Patent number: 5521121
    Abstract: A process for preventing the formation of precipitates on a substrate surface containing Ti (e.g., TiN) after a contact layer (e.g., tungsten layer) etch back. The process involves treating the wafer with an oxygen plasma etch after the tungsten etch back to remove the precursors of a precipitate. The oxygen plasma etch is performed at temperature of about 260.degree. C. and a pressure about 4 torr.
    Type: Grant
    Filed: April 3, 1995
    Date of Patent: May 28, 1996
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chia S. Tsai, Pin-Nan Tseng, Jiunn-Wen Weng