Abstract: An array substrate having a light-emitting unit region, a bonding region, and a bending region located between the light-emitting unit region and the bonding region. The light-emitting unit region is configured to be provided with light-emitting units. The bonding region is configured to bond a control circuit. The array substrate includes a base substrate located in the light-emitting unit region and the bonding region, a first organic material layer, a metal intermediate layer, and a second organic material layer. The first organic material layer is disposed on a side of the base substrate. The metal intermediate layer is disposed on a side of the first organic material layer away from the base substrate. The second organic material layer is disposed on a side of the metal intermediate layer away from the base substrate.

Abstract: An array substrate and a display device are provided. The array substrate includes: a substrate, sub-pixel units, first signal lines, and second signal lines; multiple first signal lines and multiple second signal lines intersect to define the opening areas of the sub-pixel units; each second signal line includes: multiple first parts extending along the column direction, and multiple second parts; the second part includes a portion extending along the inclination direction, and the second part connects two first parts; the angle between the inclination direction and the column direction or row direction is greater than 0; each first part is adjacent to the opening area of the sub-pixel units in the row direction, and multiple second parts respectively pass through at least of the areas between adjacent two pixel repeating unit rows, with the distance between the two first parts being greater than 0 in the row direction.

Abstract: A display panel and a display device are provided. The display panel includes sub-pixels, data lines and gate lines. The sub-pixels include pixel circuits connected to the data lines and the gate lines. The display panel includes display subregions and selection signal line groups in one-to-one correspondence, each display subregion includes at least two sub-pixels, each selection signal line group includes selection signal lines, and the selection signal lines corresponding to different display subregions are insulated from each other; the pixel circuit includes a transistor in which an active semiconductor layer includes a first part and a second part, the first part overlaps with the gate line electrically connected with the transistor, and the second part overlaps with at least one selection signal line, and the gate line and the selection signal line are both configured to turn on the transistor upon being input with a turn-on voltage.

Abstract: Disclosed are a display panel and a displaying device. The display panel includes a plurality of first-color subpixels, and each first-color subpixel includes a base, the base including a first driving electrode and a second driving electrode; at least one first electrode, disposed at a side of the base and is connected to the first driving electrode; at least one second electrode, disposed at a same side of the base with the first electrode and is connected to the second driving electrode; an intermediate layer, disposed between the first electrode and the second electrode; wherein the first electrode and the second electrode divide the first-color subpixel into a plurality of secondary pixels, the first electrode and the second electrode are insulated with each other via the intermediate layer, and are respectively connected to the first driving electrode and the second driving electrode, and control the secondary pixels independently.

Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include at least one of indium, gallium and zinc. Praseodymium is doped into the channel layer. And, in the channel layer, a number density of praseodymium atoms in the channel layer gradually decreases with a distance from the first protection layer.

Abstract: A display panel and a display device are provided. The display panel includes sub-pixels, data lines and gate lines. The sub-pixels include pixel circuits connected to the data lines and the gate lines. The display panel includes display subregions and selection signal line groups in one-to-one correspondence, each display subregion includes at least two sub-pixels, each selection signal line group includes selection signal lines, and the selection signal lines corresponding to different display subregions are insulated from each other; the pixel circuit includes a transistor in which an active semiconductor layer includes a first part and a second part, the first part overlaps with the gate line electrically connected with the transistor, and the second part overlaps with at least one selection signal line, and the gate line and the selection signal line are both configured to turn on the transistor upon being input with a turn-on voltage.

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Abstract: An array substrate and a display device are provided. The array substrate includes: a substrate, sub-pixel units, first signal lines, and second signal lines; multiple first signal lines and multiple second signal lines intersect to define the opening areas of the sub-pixel units; each second signal line includes: multiple first parts extending along the column direction, and multiple second parts; the second part includes a portion extending along the inclination direction, and the second part connects two first parts; the angle between the inclination direction and the column direction or row direction is greater than 0; each first part is adjacent to the opening area of the sub-pixel units in the row direction, and multiple second parts respectively pass through at least of the areas between adjacent two pixel repeating unit rows, with the distance between the two first parts being greater than 0 in the row direction.

Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Abstract: Disclosed are a display panel and a displaying device. The display panel includes a plurality of first-color subpixels, and each first-color subpixel includes a base, the base including a first driving electrode and a second driving electrode; at least one first electrode, disposed at a side of the base and is connected to the first driving electrode; at least one second electrode, disposed at a same side of the base with the first electrode and is connected to the second driving electrode; an intermediate layer, disposed between the first electrode and the second electrode; wherein the first electrode and the second electrode divide the first-color subpixel into a plurality of secondary pixels, the first electrode and the second electrode are insulated with each other via the intermediate layer, and are respectively connected to the first driving electrode and the second driving electrode, and control the secondary pixels independently.

Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Abstract: Disclosed are a preparation method of a display panel, a display panel and a displaying device. The display panel comprises a plurality of first-color subpixels, and each first-color subpixel comprises a base, the base comprising a first driving electrode and a second driving electrode; a flat layer disposed on the side, near the first driving electrode and the second driving electrode, of the base; a patterned passivation layer and at least one first electrode disposed on the side, away from the base, of the flat layer, the first electrode being connected with the first driving electrode through via holes penetrating the flat layer; and at least one second electrode disposed on the side, away from the base, of the passivation layer, the second electrode being connected with the second driving electrode through via holes penetrating the passivation layer and the flat layer.

Abstract: The present disclosure provides a driving substrate including: a flexible substrate base, a plurality of thin film transistors on the flexible substrate base and a first conductive pattern layer on a side of the thin film transistors distal to the flexible substrate base. The first conductive pattern layer includes: a plurality of first connection terminals in the display region and a plurality of signal supply lines in the bendable region. A first number of first connection terminals are electrically coupled to first electrodes of the plurality of thin film transistors. The plurality of signal supply lines are coupled to a second number of first connection terminals other than the first number of first connection terminals. At least one inorganic insulating layer including a hollowed-out pattern in the bendable region is between the first conductive pattern layer and the flexible substrate base.

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Abstract: A PIN device includes: a first doped layer, a second doped layer, and an intrinsic layer between the first doped layer and the second doped layer, where the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion.

Abstract: Disclosed are an electrical connection method for an electronic element, and a backlight module, a display panel, and a display apparatus which include an electronic element to which the electrical connection method is applied. The electrical connection method comprises: providing a driving back plane, wherein the driving back plane comprises multiple contact electrodes; forming an anti-oxidation protection film on the contact electrodes; coating a position of the anti-oxidation protection film corresponding to each contact electrode with a binding material; and transferring multiple electronic elements to the positions of the corresponding contact electrodes, binding each electronic element to the corresponding contact electrode, and removing the anti-oxidation protection film at the position of each contact electrode before completing the binding of each electronic element to the corresponding contact electrode.

Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

Abstract: The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.

Abstract: An array substrate having a light-emitting unit region, a bonding region, and a bending region located between the light-emitting unit region and the bonding region. The light-emitting unit region is configured to be provided with light-emitting units. The bonding region is configured to bond a control circuit. The array substrate includes a base substrate located in the light-emitting unit region and the bonding region, a first organic material layer, a metal intermediate layer, and a second organic material layer. The first organic material layer is disposed on a side of the base substrate. The metal intermediate layer is disposed on a side of the first to organic material layer away from the base substrate. The second organic material layer is disposed on a side of the metal intermediate layer away from the base substrate.