Abstract: A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.

Abstract: A semiconductor device includes a channel on a substrate, the channel including a two-dimensional (2D) material, a gate insulating layer on a portion of the channel, a gate electrode on the gate insulating layer, first and second contact patterns on respective portions of the channel, the first and second contact patterns including a carbide of a transition metal, and first and second source/drain electrodes on the first and second contact patterns, respectively, and the first and second source/drain electrodes including a metal.

Abstract: A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.