Abstract: A vacuum wafer chuck with solid diamond pins. The VCSEL device may comprise a plurality of layers forming a protective diode outside of the lithographic aperture area, wherein the surface area of the protective diode is larger than the surface area of said lithographic aperture.

Abstract: A method of producing reaction bonded silicon carbide (RB-SiC) ceramic components containing internal channels is described. In some embodiments, methods as described herein may utilize diamond powder at the interface of two or more preformed sections.

Abstract: A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

Abstract: The present disclosure provides a method for extracting Gymnadenia conopsea(L.)R.Br., which includes the following steps: (1) the root tuber of Gymnadenia conopsea(L.)R.Br. is soaked in water so that it can be fully infiltrated until having been taken as a sample, no white core is observed; (2) the root tuber of Gymnadenia conopsea(L.)R.Br. is ultrafinely comminuted by wet method to obtain a dispersion slurry; (3) additional water is supplemented into the dispersion slurry to obtain diluted dispersion followed by heating and adding neutral protease, and then extraction is carried out through circulation and homogenization by the homogenization pump to obtain extracted material fluid; (4) heat preservation and enzyme inactivation; (5) coarse filtration to obtain a coarse filtrate; and (6) fine filtration to obtain a fine filtrate. The disclosure also provides a related extract of Gymnadenia conopsea(L)R.Br.

Abstract: A mirror device includes a multi-phase substrate and a single-phase layer. The multi-phase layer is formed of reaction-bonded silicon-carbide (RB-SiC, or Si/SiC) material. The single-phase layer is formed of elemental silicon. The single-phase layer is formed in-situ, that is, contemporaneously with, the formation of RB-SiC material. The single-phase layer is integrally bonded, as one piece, to silicon of the multi-phase substrate. Methods of making a multi-layer device, such as a mirror device, are also described. One such method includes providing a porous mass of silicon carbide and carbon, causing molten elemental silicon to infiltrate the porous mass to form RB-SiC material, simultaneously causing the silicon to flow into a cavity to form a single-phase layer of polishable silicon, integrally bonding silicon in the cavity to the RB-SiC material, and, if desired, polishing a surface of the single-phase layer.

Abstract: A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

Abstract: A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

Abstract: A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

Abstract: The present disclosure provides a method for extracting Gymnadenia conopsea(L.)R.Br., which includes the following steps: (1) the root tuber of Gymnadenia conopsea(L.)R.Br. is soaked in water so that it can be fully infiltrated until having been taken as a sample, no white core is observed; (2) the root tuber of Gymnadenia conopsea(L.)R.Br. is ultrafinely comminuted by wet method to obtain a dispersion slurry; (3) additional water is supplemented into the dispersion slurry to obtain diluted dispersion followed by heating and adding neutral protease, and then extraction is carried out through circulation and homogenization by the homogenization pump to obtain extracted material fluid; (4) heat preservation and enzyme inactivation; (5) coarse filtration to obtain a coarse filtrate; and (6) fine filtration to obtain a fine filtrate. The disclosure also provides a related extract of Gymnadenia conopsea(L)R.Br.

Abstract: The disclosure concerns polymer compositions exhibiting thermal conductivity and laser marking properties while maintaining mechanical properties and a light color throughout the composition.

Abstract: The present disclosure relates to a polymer composition comprising a polycarbonate polymer, a laser direct structuring additive capable of being activated by electromagnetic radiation and thereby forming elemental metal nuclei, and a reflection additive. Also disclosed is a method for making the disclosed polymer composition and an article of manufacture comprising the disclosed polymer composition.

Abstract: The present disclosure relates to a wear resistant polymer composition. The disclosed composition comprises a polymer matrix and a tetrafluoroethylene polymer. Also disclosed is a method for making the disclosed polymer composition and an article of manufacture comprising the disclosed polymer composition.

Abstract: A process for producing a coating includes preparing at least one feedstock liquid precursor by dispersing at least one powder into a solution of at least one salt in at least one solvent, injecting the liquid precursor into a plasma jet to form a residue, and depositing the residue onto a surface. The powder includes at least one chemical compound including at least a first chemical element. The salt includes at least a second chemical element.

Abstract: The present disclosure relates to a wear resistant polymer composition. The disclosed composition comprises a polymer matrix and a tetrafluoroethylene polymer. Also disclosed is a method for making the disclosed polymer composition and an article of manufacture comprising the disclosed polymer composition.

Abstract: Disclosed herein are methods and compositions of blended polyamide compositions with improved thermal conductivity. The resulting blended polymer compositions, comprising one or more polyamide polymers, one or more thermally conductive fillers, and a laser direct structuring additive, wherein the blended polymer composition has improved thermal conductivity.

Abstract: A method for configuring a service and a method and apparatus for rate matching in a TD-SCDMA system, this method for configuring the service includes: taking that a check bit puncturing ratio should be more than 7i+a or less than 7i?a as a newly added constraint condition, and the check bit puncturing ratios of each configured service being outside a range of [7i+a, 7i?a], the method for rate matching includes: when puncturing each path of check bits of the current data block, if a difference between a position Pk of kth reserved check bit calculated according to a method defined by the service and a previously determined position NPk?1 of k?1th reserved check bit is a positive integral multiple of 7, determining a position NPk of kth reserved check bit as Pk plus 1 or Pk minus 1, and Pk plus 1 and Pk minus 1 requiring carrying out alternately.

Abstract: The invention provides a method for hierarchy management for a HARQ memory, wherein, the HARQ memory includes an on-chip memory including one or more storage blocks, each of which corresponds to a using status bit for indicating whether the storage block is overlayable. The method includes the following steps of: when receiving new data of a coded block, searching the on-chip memory for any overlayable storage block, and if there exists an overlayable storage block, storing the new data into the storage block and setting the using status bit corresponding to the storage block to be un-overlayable; if there is no overlayable storage block, storing the new data into an off-chip memory; and when the new data are checked and pass the check, setting the using status bit corresponding to the storage block in which the new data are stored to be overlayable. The invention also provides a corresponding system.

Abstract: The invention provides a method for hierarchy management for a HARQ memory, wherein, the HARQ memory includes an on-chip memory including one or more storage blocks, each of which corresponds to a using status bit for indicating whether the storage block is overlayable. The method includes the following steps of: when receiving new data of a coded block, searching the on-chip memory for any overlayable storage block, and if there exists an overlayable storage block, storing the new data into the storage block and setting the using status bit corresponding to the storage block to be un-overlayable; if there is no overlayable storage block, storing the new data into an off-chip memory; and when the new data are checked and pass the check, setting the using status bit corresponding to the storage block in which the new data are stored to be overlayable. The invention also provides a corresponding system.

Abstract: A method for configuring a service and a method and apparatus for rate matching in a TD-SCDMA system, this method for configuring the service includes: taking that a check bit puncturing ratio should be more than 7i+a or less than 7i?a as a newly added constraint condition, and the check bit puncturing ratios of each configured service being outside a range of [7i+a, 7i?a], the method for rate matching includes: when puncturing each path of check bits of the current data block, if a difference between a position Pk of kth reserved check bit calculated according to a method defined by the service and a previously determined position NPk-1 of k?1th reserved check bit is a positive integral multiple of 7, determining a position NPk of kth reserved check bit as Pk plus 1 or Pk minus 1, and Pk plus 1 and Pk minus 1 requiring carrying out alternately.