Abstract: An engine balancing system includes an engine body. At least two slider-crank mechanisms are provided inside the engine body. One of the slider-crank mechanisms is arranged opposite to the other slider-crank mechanism. A slider in one of the slider-crank mechanisms is moved at a speed and acceleration similar to a speed and acceleration of a slider in the other slider-crank mechanism. The slider-crank mechanism includes a connecting rod and a crankshaft with a crank. One end of one of the slider-crank mechanisms and one end of the other slider-crank mechanism are connected to the same crankshaft through the crank. The balancing system can effectively eliminate first-order, second-order and higher-order vibrations generated during engine operation, thus reducing the probability of equipment damage.

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.

Abstract: An engine balancing system includes an engine body. At least two slider-crank mechanisms are provided inside the engine body. One of the slider-crank mechanisms is arranged opposite to the other slider-crank mechanism. A slider in one of the slider-crank mechanisms is moved at a speed and acceleration similar to a speed and acceleration of a slider in the other slider-crank mechanism. The slider-crank mechanism includes a connecting rod and a crankshaft with a crank. One end of one of the slider-crank mechanisms and one end of the other slider-crank mechanism are connected to the same crankshaft through the crank. The balancing system can effectively eliminate first-order, second-order and higher-order vibrations generated during engine operation, thus reducing the probability of equipment damage.

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.