Abstract: Disclosed is a composition containing 2?-FL for ameliorating, preventing or treating diseases caused by reduction of dopamine. 2?-FL has an advantage of effectively preventing or treating diseases caused by a decrease in dopamine by effectively suppressing degeneration of dopaminergic neurons. In particular, the composition of the present invention is effective in preventing, treating, or ameliorating Parkinson's disease caused by reduction of dopamine because it contains 2?-fucosyllactose (2?-FL) as an active ingredient, thereby suppressing the decrease in dopaminergic neurons and exhibiting an effect of improving motor activity.

Abstract: This application relates to a device and a method for voice-based trauma screening using deep learning. The device and method for voice-based trauma screening using deep learning screen for trauma through voices that may be obtained in a non-contact manner without limitations of space or situation. In one aspect, the device includes a memory configured to store at least one program and a processor configured to perform an operation by executing the at least one program. The processor can obtain voice data, pre-process the voice data, convert pre-processed voice data into image data, and input the image data to a deep learning model and obtain a trauma result value as an output value of the deep learning model.

Abstract: The present disclosure discloses a display device improving the visibility of an image and a method of improving the visibility of an image therefor. The display device can improve the visibility of an image by implementing a global compensation and a local compensation adaptively to content that is represented in an image.

Abstract: The present disclosure discloses a display device for improving visibility of an image and a visibility improvement method of an image therefor, and the display device implements global compensation and local compensation adaptively to content displayed in the image, thereby improving the visibility of the image.

Abstract: An organic electroluminescent device including a first electrode, a second electrode, and an organic layer formed between the first electrode and the second electrode. The organic layer includes a light emitting layer formed using a solution containing an organic electroluminescent material and a solvent. The organic electroluminescent material includes a host and a dopant, and the host is one or more compounds represented by [Formula A] below.

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

Abstract: A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

Abstract: A tool changing system of a machining center for machining a workpiece of a vehicle includes a machining unit including a jig portion for loading the workpiece and a tool loading device for loading a tool for machining the workpiece, a first magazine for storing a plurality of first tools, a second magazine for storing a plurality of second tools, and a controller configured to manage changing of the first tool between the machining unit and the first magazine and changing of the second tool between the machining unit.

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

Abstract: An apparatus for activating a membrane electrode assembly (MEA) for fuel cells includes: a frame. A plurality of separation plates are disposed on an upper side of a base plate, which is disposed on a top portion of the frame, to move straightly in a length direction. The plurality of separation plates are spaced apart from each other with the MEA interposed therebetween in the direction in which the separation plates move. A tilt unit, which is connected to the frame and the base plate, upwardly tilt the base plate with respect to the frame and remove a coolant generated when the MEA is activated.

Abstract: A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

Abstract: A slab scarfing apparatus comprises: an upper nozzle unit having an upper surface nozzle for scarfing an edge portion of the upper surface of a slab and having a first side nozzle scarfing an upper edge portion of the side surface of the slab and moving together with the upper surface nozzle; a lower nozzle unit having a lower nozzle for scarfing an edge portion of the lower surface of the slab and having a second side nozzle scarfing a lower edge portion of the side surface of the slab and moving together with the lower nozzle; and a moving apparatus for moving the upper nozzle unit and the lower nozzle unit to allow the upper nozzle unit and the lower nozzle unit to be adjacent to or to be spaced apart from an edge portion of the slab. A method of controlling the apparatus is provided.

Abstract: An apparatus for activating a membrane electrode assembly (MEA) for fuel cells includes: a frame. A plurality of separation plates are disposed on an upper side of a base plate, which is disposed on a top portion of the frame, to move straightly in a length direction. The plurality of separation plates are spaced apart from each other with the MEA interposed therebetween in the direction in which the separation plates move. A tilt unit, which is connected to the frame and the base plate, upwardly tilt the base plate with respect to the frame and remove a coolant generated when the MEA is activated.

Abstract: An apparatus for activating a membrane electrode assembly (MEA) for fuel cells includes: a frame. A plurality of separation plates are disposed on an upper side of a base plate, which is disposed on a top portion of the frame, to move straightly in a length direction. The plurality of separation plates are spaced apart from each other with the MEA interposed therebetween in the direction in which the separation plates move. A tilt unit, which is connected to the frame and the base plate, upwardly tilt the base plate with respect to the frame and remove a coolant generated when the MEA is activated.

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.