Patents by Inventor Ji-Won YUN

Ji-Won YUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12121710
    Abstract: A device for cutting, separation, and discharge of a syringe according to an embodiment of the present disclosure includes a barrel unit, a main body including a driving unit configured to rotate the barrel unit, and a cutting body configured to cut a needle portion of a syringe during rotation of the barrel unit, wherein transfer of the syringe inserted into the barrel unit, cutting of the needle portion, discharge of the needle portion, and discharge of a syringe main body are performed by only one rotation of the barrel unit.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: October 22, 2024
    Assignee: MUNE
    Inventors: Kwang-Bin Oh, You-Hwa Kim, Jae-Hak Jeong, Nam-Young Kim, Ju-Hwan Noh, Ji-Won Yun
  • Publication number: 20220072240
    Abstract: A device for cutting, separation, and discharge of a syringe according to an embodiment of the present disclosure includes a barrel unit, a main body including a driving unit configured to rotate the barrel unit, and a cutting body configured to cut a needle portion of a syringe during rotation of the barrel unit, wherein transfer of the syringe inserted into the barrel unit, cutting of the needle portion, discharge of the needle portion, and discharge of a syringe main body are performed by only one rotation of the barrel unit.
    Type: Application
    Filed: December 16, 2019
    Publication date: March 10, 2022
    Inventors: Kwang-Bin OH, You-Hwa KIM, Jae-Hak JEONG, Nam-Young KIM, Ju-Hwan NOH, Ji-Won YUN
  • Patent number: 10734380
    Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: August 4, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Min Jeong, Kee-Sang Kwon, Jin-Wook Lee, Ki-Hyung Ko, Sang-Jine Park, Jae-Jik Baek, Bo-Un Yoon, Ji-Won Yun
  • Patent number: 10490782
    Abstract: A rechargeable battery capable of preventing rust generation at an opening side of a battery case. The rechargeable battery according to embodiments of the present invention includes: an electrode assembly; a case having an opening and accommodating the electrode assembly; and a cap assembly electrically connected to the electrode assembly, and coupled to an opening side of the case with a gasket interposed therebetween, wherein the opening side of the case includes a trimming end, a gap proximate the trimming end, and a coating layer on an inner surface of the gap proximate the trimming end.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: November 26, 2019
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jae-Il Seong, Hideaki Yoshio, Ji-Won Yun
  • Publication number: 20190043860
    Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.
    Type: Application
    Filed: October 12, 2018
    Publication date: February 7, 2019
    Inventors: Ji-Min Jeong, Kee-Sang Kwon, Jin-Wook Lee, Ki-Hyung Ko, Sang-Jine Park, Jae-Jik Baek, Bo-Un Yoon, Ji-Won Yun
  • Patent number: 10128236
    Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Min Jeong, Kee-Sang Kwon, Jin-Wook Lee, Ki-Hyung Ko, Sang-Jine Park, Jae-Jik Baek, Bo-Un Yoon, Ji-Won Yun
  • Patent number: 10128246
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Publication number: 20170271336
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Application
    Filed: June 7, 2017
    Publication date: September 21, 2017
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Patent number: 9704864
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Grant
    Filed: June 22, 2015
    Date of Patent: July 11, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Patent number: 9570731
    Abstract: A rechargeable battery includes an electrode assembly including a first electrode, a second electrode, and a separator located between the first electrode and the second electrode; a case accommodating the electrode assembly; a cap plate sealing an opening of the case; and an insulation case located between the cap plate and the electrode assembly, the insulation case having a base and a side wall protruding from the base, the side wall including avoiding portions formed thereon.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: February 14, 2017
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jae-Il Seong, Hideaki Yoshio, Ji-Won Yun, Kwang-Sik Seo
  • Patent number: 9559343
    Abstract: A rechargeable battery including an electrode assembly, a case configured to receive the electrode assembly, a cap plate configured to be coupled to an opening of the case and comprising a fixing groove, and an insulation case between the cap plate and the electrode assembly and including a fixing protrusion configured to be inserted into the fixing groove.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: January 31, 2017
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Ji-Won Yun
  • Publication number: 20160284699
    Abstract: A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.
    Type: Application
    Filed: January 27, 2016
    Publication date: September 29, 2016
    Inventors: Ji-Min Jeong, Kee-Sang Kwon, Jin-Wook Lee, Ki-Hyung Ko, Sang-Jine Park, Jae-Jik Baek, Bo-Un Yoon, Ji-Won Yun
  • Patent number: 9401504
    Abstract: A battery cell including an electrode assembly; a taping portion on the electrode assembly, the taping portion including a first adhesive layer on the outer surface of the electrode assembly, a first base layer on the first adhesive layer, and a second base layer on the first base layer; and a case receiving the electrode assembly.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: July 26, 2016
    Assignee: SAMSUNG SDI CO., LTD.
    Inventor: Ji-Won Yun
  • Publication number: 20160043170
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
    Type: Application
    Filed: June 22, 2015
    Publication date: February 11, 2016
    Inventors: Sang-Jine Park, Bo-Un Yoon, Ha-Young Jeon, Yeon-Jin Gil, Ji-Won Yun, Won-Sang Choi
  • Patent number: 9123919
    Abstract: An embodiment of the present invention provides a rechargeable battery that prevents generation of a crack under the longitudinal compression condition by increasing an elongation ratio to a part of the bottom of the case to prevent an internal short-circuit. A rechargeable battery according to an exemplary embodiment of the present invention includes: a case receiving an electrode assembly; a cap plate covering an opening of the case; and an electrode terminal provided in the cap plate and electrically connected to the electrode assembly, the case includes side walls connected with each other and forming the opening in one side and a bottom connecting neighboring side walls at the opposite side of the opening for sealing, and the bottom a first elongation portion having a first elongation ratio and a second elongation portion having a second elongation ratio that is higher than the first elongation ratio.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: September 1, 2015
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Ji-Won Yun
  • Publication number: 20150171407
    Abstract: A rechargeable battery includes an electrode assembly including a first electrode, a second electrode, and a separator located between the first electrode and the second electrode; a case accommodating the electrode assembly; a cap plate sealing an opening of the case; and an insulation case located between the cap plate and the electrode assembly, the insulation case having a base and a side wall protruding from the base, the side wall including avoiding portions formed thereon.
    Type: Application
    Filed: May 15, 2014
    Publication date: June 18, 2015
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Jae-Il Seong, Hideaki Yoshio, Ji-Won Yun, Kwang-Sik Seo
  • Publication number: 20150132636
    Abstract: A rechargeable battery capable of preventing rust generation at an opening side of a battery case. The rechargeable battery according to embodiments of the present invention includes: an electrode assembly; a case having an opening and accommodating the electrode assembly; and a cap assembly electrically connected to the electrode assembly, and coupled to an opening side of the case with a gasket interposed therebetween, wherein the opening side of the case includes a trimming end, a gap proximate the trimming end, and a coating layer on an inner surface of the gap proximate the trimming end.
    Type: Application
    Filed: September 25, 2014
    Publication date: May 14, 2015
    Inventors: Jae-Il Seong, Hideaki Yoshio, Ji-Won Yun
  • Publication number: 20150086858
    Abstract: A rechargeable battery includes: an electrode assembly; an outer case to enclose the electrode assembly, where the outer case includes an opening; a cap plate to seal the opening of the outer case; an insulating case of a predetermined height installed within the outer case, the insulating case installed between the cap plate and the electrode assembly; and an electrode terminal installed on the cap plate and electrically connected to the electrode assembly, where the outer case includes an insulating portion formed on an inner surface of the opening thereof adjacent said insulating case, said insulating portion being electrically insulating, and said insulating portion located at an upper portion of the outer case and being shaped to prevent foreign substances from flowing from the external environment into the outer case.
    Type: Application
    Filed: February 27, 2014
    Publication date: March 26, 2015
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Jae-Il Seong, Hideaki Yoshio, Ji-Won Yun
  • Patent number: D906558
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: December 29, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Ji-Won Yun, Deuk-Heon Kang
  • Patent number: D912287
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: March 2, 2021
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Deuk-Heon Kang, Ji-Won Yun