Patents by Inventor Jiwoong YANG

Jiwoong YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220026954
    Abstract: A mobile terminal comprises a first frame, a second frame capable of slidably moving from the first frame in a first direction or a second direction which is an opposite direction of the first direction, and a driving unit slidably moving the second frame, wherein the driving unit includes a motor coupled to the first frame, a pinion gear rotated by a rotational force transferred from the motor, a gear rack extended in the first direction and coupled to the second frame, moving in the first direction or the second direction when the pinion gear is rotated, a guide rail coupled with the gear rack, and a guide block coupled to the first frame, moving along the guide rail.
    Type: Application
    Filed: December 16, 2020
    Publication date: January 27, 2022
    Applicant: LG ELECTRONICS INC.
    Inventors: Hakho CHOI, Seounghwan SEOL, Sungdo KIM, Jiwoong YANG, Sangwook PARK, Minchul LEE, Jeeho YOM
  • Publication number: 20210391412
    Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.
    Type: Application
    Filed: August 19, 2021
    Publication date: December 16, 2021
    Applicant: Gwangju Institute of Science and Technology
    Inventors: Sanghan Lee, Hyunji An, Jiwoong Yang
  • Patent number: 11158701
    Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: October 26, 2021
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Sanghan Lee, Hyunji An, Jiwoong Yang
  • Publication number: 20210151552
    Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.
    Type: Application
    Filed: November 22, 2019
    Publication date: May 20, 2021
    Applicant: Gwangju Institute of Science and Technology
    Inventors: Sanghan Lee, Hyunji An, Jiwoong Yang
  • Publication number: 20180277782
    Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be famed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
    Type: Application
    Filed: May 24, 2018
    Publication date: September 27, 2018
    Inventors: Daehyeong KIM, Taeghwan HYEON, Moonkee CHOI, Jiwoong YANG, Kwanghun KANG
  • Patent number: 10026913
    Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: July 17, 2018
    Assignees: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, INSTITUTE FOR BASIC SCIENCE
    Inventors: Daehyeong Kim, Taeghwan Hyeon, Moonkee Choi, Jiwoong Yang, Kwanghun Kang
  • Publication number: 20170256730
    Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
    Type: Application
    Filed: July 22, 2015
    Publication date: September 7, 2017
    Inventors: Daehyeong KIM, Taeghwan HYEON, Moonkee CHOI, Jiwoong YANG, Kwanghun KANG