Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.

Abstract: Provided is a liquid cell for an electron microscope according to an embodiment of the inventive concept, including a lower widow layer, an upper widow layer above the lower widow layer, and a separation film disposed between the upper widow layer and the lower widow layer so as to separate the upper widow layer and the lower widow layer from each other. An upper space may be defined by the upper widow layer and the separation film, and a lower space may be defined by the lower widow layer and the separation film. The upper widow layer, the lower widow layer, and the separation film may include the same material.

Abstract: Disclosed in the present application is a mobile terminal having a flexible display.

Abstract: A mobile terminal comprises a first frame, a second frame capable of slidably moving from the first frame in a first direction or a second direction which is an opposite direction of the first direction, and a driving unit slidably moving the second frame, wherein the driving unit includes a motor coupled to the first frame, a pinion gear rotated by a rotational force transferred from the motor, a gear rack extended in the first direction and coupled to the second frame, moving in the first direction or the second direction when the pinion gear is rotated, a guide rail coupled with the gear rack, and a guide block coupled to the first frame, moving along the guide rail.

Abstract: A mobile terminal comprises a first frame, a second frame capable of slidably moving from the first frame in a first direction or a second direction which is an opposite direction of the first direction, and a driving unit slidably moving the second frame, wherein the driving unit includes a motor coupled to the first frame, a pinion gear rotated by a rotational force transferred from the motor, a gear rack extended in the first direction and coupled to the second frame, moving in the first direction or the second direction when the pinion gear is rotated, a guide rail coupled with the gear rack, and a guide block coupled to the first frame, moving along the guide rail.

Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.

Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.

Abstract: Provided is a memcapacitor. The memcapacitor includes: a first electrode having a metal-doped perovskite composition; a second electrode disposed on the first electrode; and a dielectric thin film having a perovskite composition, disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage between the first electrode and the second electrode.

Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be famed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.

Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.

Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.