Abstract: A ReRAM device manufactured using 2-D Si2Te3 (silicon telluride) nanowires or nanoplates. The Si2Te3 nanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the Si2Te3 nanowires defines the switch “on” and “off” directions, which become permanent once set.

Abstract: Apparatus and methods related to de-identifying data are provided. An example method includes receiving, by a computing device, input data comprising text. The method further includes applying a neural network to a tokenized representation of the input text, to generate an embedding based on contextual information associated with an entity. The method also includes predicting, by the neural network and based on the embedding, whether the input data comprises protected data in the text, wherein the neural network has been trained on a training dataset that has been partially customized based on the entity. The method further includes de-identifying the protected data in the text upon a determination that the input data comprises protected data in the text.

Abstract: A ReRAM device manufactured using 2-D Si2Te3 (silicon telluride) nanowires or nanoplates. The Si2Te3 nanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the Si2Te3 nanowires defines the switch “on” and “off” directions, which become permanent once set.