Abstract: A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a photoresist layer are sequentially formed on a substrate having a pattern that defines a step on the substrate. Some of the photoresist layer is treated with the developing solution, to thereby form a photoresist pattern whose upper surface is situated beneath the step and hence, exposes part of the target layer. Next, the exposed part of the target layer, and the photoresist pattern are removed. A silicidation process may be carried out thereafter on the area(s) from which the target layer has been removed. The method is relatively simple because it does not involve an exposure process. Furthermore, the method can be used to manufacture devices having very fine linewidths, i.e.

Abstract: A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a photoresist layer are sequentially formed on a substrate having a pattern that defines a step on the substrate. Some of the photoresist layer is treated with the developing solution, to thereby form a photoresist pattern whose upper surface is situated beneath the step and hence, exposes part of the target layer. Next, the exposed part of the target layer, and the photoresist pattern are removed. A silicidation process may be carried out thereafter on the area(s) from which the target layer has been removed. The method is relatively simple because it does not involve an exposure process. Furthermore, the method can be used to manufacture devices having very fine linewidths, i.e.

Abstract: Apertures for use in an illuminating apparatus for forming patterns in a semiconductor wafer and illuminating apparatus including such apertures are provided. The aperture includes a shielding area and a non-circular transparent area within the shielding area. The transparent area has a ratio of a short axis to a long axis (R=short axis/long axis) that exceeds 0 and is smaller than 1 (0<R<1), the short axis being substantially perpendicular to the long axis. The transparent area may have an elliptical shape with an eccentricity (e) that exceeds 0 and is smaller than 1 (0<e<1). The transparent area may be positioned within the shielding area to define two thin portions of the shielding area and two thick portions of the shielding area with the long axis linking the thin portions of the shielding area and the short axis linking the thick portions of the shielding area.