Abstract: An embodiment all-solid-state battery includes an anode current collector, a double layer disposed on the anode current collector, a solid electrolyte layer disposed on the double layer, the solid electrolyte layer including a solid electrolyte, a cathode layer disposed on the solid electrolyte layer, the cathode layer including a cathode active material, and a cathode current collector disposed on the cathode layer, wherein the double layer includes a protective layer disposed on the anode current collector and a metal alloy layer disposed on the protective layer, wherein the protective layer includes a reaction product of a conductive material containing a first functional group and a binder containing a second functional group, and wherein the metal alloy layer includes a metal capable of forming an alloy with lithium.

Abstract: A separator for secondary batteries including a separator substrate having a porous structure, wherein the separator substrate comprises a polymer material. A coating layer is present on at least one surface of the separator substrate, wherein the coating layer includes a crystalline binder and an amorphous binder miscible with each other. The crystalline binder includes a first crystalline binder and a second crystalline binder, and an amount of the amorphous binder is 2 weight % to 5 weight % based on the total weight of a solid content of the coating layer, whereby the resistance in the coating layer of the separator is reduced and thus ionic conductivity is improved.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.

Abstract: Disclosed is an all-solid-state battery including an anode layer that expands and accommodates lithium metal during charging, and a method of operation thereof. The all-solid battery includes an anode current collector, an anode layer disposed on the anode current collector, a solid electrolyte layer disposed on the anode layer, a cathode active material layer disposed on the solid electrolyte layer, and a cathode current collector disposed on the cathode active material layer. The anode layer comprises particles comprising a metal capable of allying with lithium and interparticular pores.

Abstract: The present invention relates to a fusion protein in which transferrin is peptide-bonded to a terminal of a granulocyte-colony stimulating factor (G-CSF) protein or a G-CSF mutant protein in which the 116th threonine is substituted with cysteine in the amino acid sequence of the G-CSF. Specifically, the granulocyte-colony stimulating factor (G-CSF) mutant protein of the present invention or the transferrin fusion protein thereof displays a significantly increased specific activity and blood stability, compared with the conventional human G-CSF, and has a higher purification efficiency than the conventional PEGylated G-CSF characterized by the extended half-life, so that it can be advantageously used for preventing or treating ischemic diseases or neutropenia.

Abstract: The present invention relates to a fusion protein in which transferrin is peptide-bonded to a terminal of a granulocyte-colony stimulating factor (G-CSF) protein or a G-CSF mutant protein in which the 116th threonine is substituted with cysteine in the amino acid sequence of the G-CSF. Specifically, the granulocyte-colony stimulating factor (G-CSF) mutant protein of the present invention or the transferrin fusion protein thereof displays a significantly increased specific activity and blood stability, compared with the conventional human G-CSF, and has a higher purification efficiency than the conventional PEGylated G-CSF characterized by the extended half-life, so that it can be advantageously used for preventing or treating ischemic diseases or neutropenia.

Abstract: The present invention relates to a fusion protein in which transferrin is peptide-bonded to a terminal of a granulocyte-colony stimulating factor (G-CSF) protein or a G-CSF mutant protein in which the 116th threonine is substituted with cysteine in the amino acid sequence of the G-CSF. Specifically, the granulocyte-colony stimulating factor (G-CSF) mutant protein of the present invention or the transferrin fusion protein thereof displays a significantly increased specific activity and blood stability, compared with the conventional human G-CSF, and has a higher purification efficiency than the conventional PEGylated G-CSF characterized by the extended half-life, so that it can be advantageously used for preventing or treating ischemic diseases or neutropenia.

Abstract: The present invention relates to a fusion protein in which transferrin is peptide-bonded to a terminal of a granulocyte-colony stimulating factor (G-CSF) protein or a G-CSF mutant protein in which the 116th threonine is substituted with cysteine in the amino acid sequence of the G-CSF. Specifically, the granulocyte-colony stimulating factor (G-CSF) mutant protein of the present invention or the transferrin fusion protein thereof displays a significantly increased specific activity and blood stability, compared with the conventional human G-CSF, and has a higher purification efficiency than the conventional PEGylated G-CSF characterized by the extended half-life, so that it can be advantageously used for preventing or treating ischemic diseases or neutropenia.

Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (?).

Abstract: Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

Abstract: An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.

Abstract: An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

Abstract: An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

Abstract: Information storage devices are provided. An information storage device includes a track including at least one Co alloy layer and a soft magnetic layer. The track further includes a plurality of magnetic domains. A current applying element is connected to the track. The track includes a plurality of layers stacked alternately.

Abstract: A compressor having a casing to which a gas suction pipe is connected; a driving motor provided in the casing; a cylinder; a valve supporting plate (210) covering the cylinder (300), the valve supporting plate (210) having a suction hole (212) for sucking gas into the cylinder (300) and two discharge holes (211) for discharging gas compressed in the cylinder (300); a piston (100) having two protrusions (101) at a pressure surface in correspondence to the two discharge holes (211) of the valve supporting plate (210), the protrusions (101) having different sized cross-sections, the piston being linearly reciprocal in the cylinder (300) by receiving a driving force of the driving motor; a suction valve coupled to the valve supporting plate (210) to open and close the suction hole (212); a discharge valve coupled to the valve supporting plate to open and close the two discharge holes (211).

Abstract: Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.

Abstract: A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Abstract: A detachable connecting rod includes a first member (410)a large end portion (411) having a trough hole (H1), and a first connection rod portion (412) extending from the large end portion (411), the first connection rod portion (412) having a pair of spaced apart arms defining a coupling groove (413) extending in the same direction as an axial direction of the through hole (H1); a second member (420) including a small end portion having a through hole (H2), and second connection rod portion (422) extending from the small end portion, the second connection rod (422) portion being inserted into the coupling groove (413) and a coupling unit for coupling the first connection rod portion (412) to the second connection rod portion inserted (412) into the coupling groove (413) of the first member (410). The detachable connecting rod is useable in a compressor.

Abstract: An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.