Abstract: An apparatus for predicting performance of a wheel in a vehicle: includes a learning device that generates a latent space for a plurality of two-dimensional (2D) wheel images based on a convolutional autoencoder (CAE), extracts a predetermined number of the plurality of 2D wheel images from the latent space, and learns a dataset having the plurality of 2D wheel images and performance values corresponding to the plurality of 2D wheel images; and a controller that predicts performance for the plurality of 2D wheel images based on a performance prediction model obtained by the learning device.

Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: A surface-treated copper foil according to exemplary embodiments includes a copper foil layer and a protrusion layer formed on one surface of the copper foil layer. Pores are formed inside the protrusion layer or around a boundary between the copper foil layer and the protrusion layer. Abnormal growth of the protrusions may be prevented through the pores and thus a bonding force with the insulation layer may be improved.

Abstract: A method for increasing dendritic cell migration ability, and a use thereof are disclosed. A method according to one aspect can increase the migration ability of mature dendritic cells and increase the induction, by dendritic cells, of inflammatory cytokine production, T lymphocyte proliferation and T lymphocyte polarization, and thus can be used for the prevention or treatment of immune-related diseases.

Abstract: Disclosed are novel modified or engineered oncolytic viruses comprising an esRAGE gene and methods for using said oncolytic virus for the treatment of a cancer.

Abstract: A high voltage high side DMOS removing the N-buried layer from the DMOS bottom provides lower Ron*A at given breakdown voltage. The high voltage high side DMOS has a P-type substrate, an epitaxial layer, a field oxide, an N-type well region a gate oxide, a gate poly, a P-type base region, a deep P-type region, an N-type lightly doped well region, a first N-type highly doped region, a second N-type highly doped region and a P-type highly doped region.