Abstract: A semiconductor memory device includes first and second memory cells, first and second word lines that are respectively connected to gates of the first and second memory cells, and a control circuit that executes first and second read operations in response to first and second command sets, respectively. The first read operation includes a first read sequence, in which the control circuit reads data by applying first to third voltages to the first word line, and a second read sequence, in which the control circuit reads data by applying a first read voltage that is set based on the result of the first read sequence, to the first word line. In the second read operation, the control circuit reads data by applying a second read voltage that is set based on the result of the first read sequence of the first read operation, to the second word line.