Abstract: A modeling method for a high-density discrete particle multiphase system, including the following steps: determining a model boundary; drawing up a volume sum of particle phases within each size range in the model; generating compact models of particle models within all size ranges; expanding the particles in the compact models; and obtaining a high-density particle accumulation model. The method can be used for modeling of meso-structures of particle reinforced composite materials, granular materials in soft matter, particle accumulation materials and the like, and can also be extended to short fiber reinforced composite materials and the like. The method solves the modeling problem when the particles intersect with the model boundary, and can be applied to the modeling and analysis of composite specimens with machined surfaces.

Abstract: A modeling method for a high-density discrete particle multiphase system, including the following steps: determining a model boundary; drawing up a volume sum of particle phases within each size range in the model; generating compact models of particle models within all size ranges; expanding the particles in the compact models; and obtaining a high-density particle accumulation model. The method can be used for modeling of meso-structures of particle reinforced composite materials, granular materials in soft matter, particle accumulation materials and the like, and can also be extended to short fiber reinforced composite materials and the like. The method solves the modeling problem when the particles intersect with the model boundary, and can be applied to the modeling and analysis of composite specimens with machined surfaces.

Abstract: A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1 and q=0˜1.

Abstract: A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.

Abstract: A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1?a?b?cMgaCdbBecO1?p?qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.

Abstract: A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1 and q=0˜1.

Abstract: A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1?a?b?cMgaCdbBecO1?p?qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.

Abstract: The method of the present invention is used to join two dissimilar materials together, and particularly to transfer a film to a substrate when the difference in thermal expansion coefficients between the film and the substrate is very big. A hydrophilic surface is created on one material and an atmosphere reactive metal element is deposited on the surface of another material. When the materials are tightly contacted, with the reactive element pressed against the hydrophilic surface, the reactive metal element reacts with the moisture from the hydrophilic surface at room temperature. Strong bonds form during the reaction joining the two materials together. Because the procedure takes place at room temperature, extremely low stress is built in. The film joining is successful even with a big thermal expansion coefficient difference between the materials, such as exist between GaAs and silicon and between silicon and sapphire.

Abstract: The method of the present invention is used to join two dissimilar materials together, and particularly to transfer a film to a substrate when the difference in thermal expansion coefficients between the film and the substrate is very big. A hydrophilic surface is created on one material and an atmosphere reactive metal element is deposited on the surface of another material. When the materials are tightly contacted, with the reactive element pressed against the hydrophilic surface, the reactive metal element reacts with the moisture from the hydrophilic surface at room temperature. Strong bonds form during the reaction joining the two materials together. Because the procedure takes place at room temperature, extremely low stress is built in. The film joining is successful even with a big thermal expansion coefficient difference between the materials, such as exist between GaAs and silicon and between silicon and sapphire.